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Characterization of Nitrogen Content/Distribution in SiON Gate Dielectrics using Angle-Resolved X-Ray Photoelectron Spectroscopy (AR-XPS) and Aberration Corrected Scanning Transmission Electron Spectroscopy (Cs-STEM)

Published online by Cambridge University Press:  05 August 2007

C Lazik ,
G Conti  and
Y Uritsky
C Lazik
Affiliation:
Applied Materials,Inc
G Conti
Affiliation:
Applied Materials,Inc
Y Uritsky
Affiliation:
Applied Materials,Inc
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Extract

Extended abstract of a paper presented at Microscopy and Microanalysis 2007 in Ft. Lauderdale, Florida, USA, August 5 – August 9, 2007

Type
Research Article
Information
Microscopy and Microanalysis , Volume 13 , Issue S02 , August 2007 , pp. 856 - 857
Copyright
© 2007 Microscopy Society of America

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