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Characterization of Defects in III-V Semiconductor Materials (InP, GaAs and InGaAs/ InP on Si) in Nano-sized Patterns by Transmission Electron Microscopy

Published online by Cambridge University Press:  25 July 2016

J.H. Lee ,
Y.D. Cho ,
I.G. Lee ,
C.S. Shin ,
W.K. Park ,
D.H. Kim  and
D.H. Ko
J.H. Lee
Affiliation:
Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749, Korea
Y.D. Cho
Affiliation:
Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749, Korea
I.G. Lee
Affiliation:
Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749, Korea
C.S. Shin
Affiliation:
Korea Advanced Nano Fab Center, 109 Gwanggyo-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-270, Korea
W.K. Park
Affiliation:
Korea Advanced Nano Fab Center, 109 Gwanggyo-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-270, Korea
D.H. Kim
Affiliation:
School of Electronics Engineering College of IT Engineering, Kyungpook National University, 80 Daehak-ro, Buk-gu, Daegu, 702-701, Korea
D.H. Ko
Affiliation:
Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749, Korea

Abstract

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Type
Abstract
Information
Microscopy and Microanalysis , Volume 22 , Supplement S3: Proceedings of Microscopy & Microanalysis 2016 , July 2016 , pp. 1540 - 1541
Copyright
© Microscopy Society of America 2016 

References

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[4] chen, Y R & Chou, L C Journal of applied physics 46 (2013) 035306.Google Scholar