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Bismuth Nanowires for Potential Applications in Nanoscale Electronics Technology

  • Stephen B. Cronin (a1), Yu-Ming Lin (a2), Oded Rabin (a3), Marcie R. Black (a2), Gene Dresselhaus (a4), Mildred S. Dresselhaus (a1) (a2) and Pratibha L. Gai (a5) (a6)...

Abstract

Nanowires of bismuth with diameters ranging from 10 to 200 nm and lengths of 50 μm have been synthesized by a pressure injection method. Nanostructural and chemical compositional studies using environmental and high resolution transmission electron microscopy with electron stimulated energy dispersive X-ray spectroscopy have revealed essentially single crystal nanowires. The high resolution studies have shown that the nanowires contain amorphous Bi-oxide layers of a few nanometers on the surface. In situ environmental high resolution transmission electron microscopy (environmental-HRTEM) studies at the atomic level, in controlled hydrogen and other reducing gas environments at high temperatures demonstrate that gas reduction can be successfully applied to remove the oxide nanolayers and to maintain the dimensional and structural uniformity of the nanowires, which is key to attaining low electrical contact resistance.

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Corresponding author

DuPont, Central Research and Development, Experimental Station, Wilmington, DE 19880-0356, USA

Keywords

Bismuth Nanowires for Potential Applications in Nanoscale Electronics Technology

  • Stephen B. Cronin (a1), Yu-Ming Lin (a2), Oded Rabin (a3), Marcie R. Black (a2), Gene Dresselhaus (a4), Mildred S. Dresselhaus (a1) (a2) and Pratibha L. Gai (a5) (a6)...

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