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Atom Probe Analysis of III–V and Si-Based Semiconductor Photovoltaic Structures

Published online by Cambridge University Press:  14 November 2007

Brian P. Gorman ,
Andrew G. Norman  and
Yanfa Yan
Brian P. Gorman
Affiliation:
Department of Materials Science and Engineering, University of North Texas, Denton, TX 76203, USA
Andrew G. Norman
Affiliation:
Measurements and Characterization Division, National Renewable Energy Laboratory, Golden, CO 80401, USA
Yanfa Yan
Affiliation:
Measurements and Characterization Division, National Renewable Energy Laboratory, Golden, CO 80401, USA
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Abstract

The applicability of atom probe to the characterization of photovoltaic devices is presented with special emphasis on high efficiency III–V and low cost ITO/a-Si:H heterojunction cells. Laser pulsed atom probe is shown to enable subnanometer chemical and structural depth profiling of interfaces in III–V heterojunction cells. Hydrogen, oxygen, and phosphorus chemical profiling in 5-nm-thick a-Si heterojunction cells is also illustrated, along with compositional analysis of the ITO/a-Si interface. Detection limits of atom probe tomography useful to semiconductor devices are also discussed. Gaining information about interfacial abruptness, roughness, and dopant profiles will allow for the determination of semiconductor conductivity, junction depletion widths, and ultimately photocurrent collection efficiencies and fill factors.

Keywords

semiconductorsolar cellTEMatom probedoping interfaces
Type
Research Article
Information
Microscopy and Microanalysis , Volume 13 , Issue 6: Special Issue: Atom Probe Tomography , December 2007 , pp. 493 - 502
Copyright
© 2007 Microscopy Society of America

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References

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