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Applications of Automated High Resolution Strain Mapping in TEM on the Study of Strain Distribution in MOSFETs

Published online by Cambridge University Press:  27 August 2014

A. D. Darbal
Affiliation:
AppFive LLC, Tempe, USA NanoMEGAS SPRL, Brussels, Belgium
R. D. Narayan
Affiliation:
AppFive LLC, Tempe, USA
C. Vartuli
Affiliation:
Texas Instruments, Dallas, USA
T. Aoki
Affiliation:
LeRoy Eyring Center for Solid State Science, Arizona State University, Tempe, USA
J. Mardinly
Affiliation:
LeRoy Eyring Center for Solid State Science, Arizona State University, Tempe, USA
S. Nicolopoulos
Affiliation:
NanoMEGAS SPRL, Brussels, Belgium
J. K. Weiss
Affiliation:
AppFive LLC, Tempe, USA

Abstract

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Type
Abstract
Copyright
Copyright © Microscopy Society of America 2014 

References

[1] Chidambaram, PR, et al., IEEE Transactions on Electron Devices, 53 5 2006).Google Scholar
[2] Cooper, D, et al., Journal of Physics: Conference Series 326 012025 2011), p.944 -964.Google Scholar
[3] Vincent, R & Midgley, PA Ultramicroscopy 53 (1994) p. 271.Google Scholar
[4] Darbal, , et al., Proceedings of Microscopy and Microanalysis, 19, S2 (2013), pp. 702-703.Google Scholar
[5] We gratefully acknowledge the use of facilities within the LeRoy Eyring Center for Solid State Science at Arizona State University.Google Scholar