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Analytical TEM Characterization of Source/Drain Contacts in Advanced Semiconductor Devices

Published online by Cambridge University Press:  01 August 2018

J. Li
Affiliation:
IBM Research, Albany, NY, USA
H. Niimi
Affiliation:
GLOBALFOUNDRIES, Albany, NY, USA
O. Gluschenkov
Affiliation:
IBM Research, Albany, NY, USA
P. Adusumilli
Affiliation:
IBM Research, Albany, NY, USA
J. Fronheiser
Affiliation:
GLOBALFOUNDRIES, Albany, NY, USA
S. Mochizuki
Affiliation:
IBM Research, Albany, NY, USA
Z. Liu
Affiliation:
IBM Research, Albany, NY, USA
V. Kamineni
Affiliation:
GLOBALFOUNDRIES, Albany, NY, USA
M. Raymond
Affiliation:
GLOBALFOUNDRIES, Albany, NY, USA
A. V Carr
Affiliation:
IBM Research, Albany, NY, USA
T. Yamashita
Affiliation:
IBM Research, Albany, NY, USA
B. Veeraraghavan
Affiliation:
IBM Research, Albany, NY, USA
N. Saulnier
Affiliation:
IBM Research, Albany, NY, USA
J. Gaudiello
Affiliation:
IBM Research, Albany, NY, USA

Abstract

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Type
Abstract
Copyright
© Microscopy Society of America 2018 

References

[1] Niimi, H., et al, IEEE Electron Device Letters 2016 1371.Google Scholar
[2] Gluschenkov, O., et al, IEEE IEDM Technical Digest 2016 448.Google Scholar
[3] Kamineni, V., et al, IEEE IITC/AMC 2016 105.Google Scholar
[4] Xie, R., et al, IEEE IEDM Technical Digest 2016 47.Google Scholar
[5] Narasimha, S., et al, IEEE IEDM Technical Digest 2017 689.Google Scholar
[6] Auth, C., et al, IEEE IEDM Technical Digest 2017 673.Google Scholar
[7] This work was performed by the Research Alliance teams at various IBM Research and Development Facilities.Google Scholar