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Amorphization Induced by Focused Ion Beam Milling in Metallic and Electronic Materials

Published online by Cambridge University Press:  06 August 2013

Yoon Huh ,
Ki Jung Hong  and
Kwang Soo Shin
Yoon Huh*
Affiliation:
Center for Analysis and Assessment, Research Institute of Industrial Science and Technology (RIST), Pohang 790-330, Republic of Korea
Ki Jung Hong
Affiliation:
Center for Analysis and Assessment, Research Institute of Industrial Science and Technology (RIST), Pohang 790-330, Republic of Korea
Kwang Soo Shin
Affiliation:
Center for Analysis and Assessment, Research Institute of Industrial Science and Technology (RIST), Pohang 790-330, Republic of Korea
*
*Corresponding author. E-mail: yhuh@rist.re.kr
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Abstract

Focused ion beam (FIB) milling using high-energy gallium ions is widely used in the preparation of specimens for transmission electron microscopy (TEM). However, the energetic ion beam induces amorphization on the edge of specimens during milling, resulting in a mischievous influence on the clearness of high-quality transmission electron micrographs. In this work, the amorphization induced by the FIB milling was investigated by TEM for three kinds of materials, metallic materials in bulk shape, and semiconductive and electronic ceramic materials as a substrate for the deposition of thin films.

Keywords

focused ion beam (FIB)transmission electron microscopy (TEM)amorphizationmetallicsemiconductiveelectronic ceramic materials
Type
Research Article
Information
Microscopy and Microanalysis , Volume 19 , Supplement S5: IUMAS , August 2013 , pp. 33 - 37
Copyright
Copyright © Microscopy Society of America 2013 

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