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TEM Microstructure Investigation of Si/Ge Superlattice Exhibiting 1.55 μm Photoluminescence at Room Temperature

Published online by Cambridge University Press:  05 September 2003

N.D. Zakharov
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle(Saale), Germany
V.G. Talalaev
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle(Saale), Germany St.Petersburg State University, 198504 Petrodvorets, St.Petersburg, Russia
G.E. Cirlin
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle(Saale), Germany Ioffe Physico-Technical Institute RAS, Polytichnicheskaya 26, 194021 St.Petersburg, Russia Institute for Analytical Instrumentation RAS, Rizhsky 26, 198103 St.Petersburg, Russia
A. Tonkikh
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle(Saale), Germany Ioffe Physico-Technical Institute RAS, Polytichnicheskaya 26, 194021 St.Petersburg, Russia
P. Werner
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle(Saale), Germany

Abstract

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Type
Invited Papers
Copyright
Copyright © Microscopy Society of America 2003

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TEM Microstructure Investigation of Si/Ge Superlattice Exhibiting 1.55 μm Photoluminescence at Room Temperature
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