Hostname: page-component-78c5997874-ndw9j Total loading time: 0 Render date: 2024-11-17T21:49:20.490Z Has data issue: false hasContentIssue false
  • English
  • Français

Direct Observation of Threading Dislocations in Gan by High Resolution z-contrast imaging

Published online by Cambridge University Press:  02 July 2020

Y. Xin ,
N.D. Browning ,
S.J. Pennycook ,
P.D. Nellist ,
S. Sivananthan ,
J-P Faurie  and
P. Gibart
Y. Xin
Affiliation:
Department of Physics, University of Illinois at Chicago, Chicago., IL60607-7059, USA. Solid State Division, Oak Ridge National Laboratorys, Oak Ridge, TN37831-6031, USA.
N.D. Browning
Affiliation:
Department of Physics, University of Illinois at Chicago, Chicago., IL60607-7059, USA.
S.J. Pennycook
Affiliation:
Solid State Division, Oak Ridge National Laboratorys, Oak Ridge, TN37831-6031, USA.
P.D. Nellist
Affiliation:
Cavendish Laboratory, Cambridge University, Madingley Road, Cambridge, CB3 0HE, UK.
S. Sivananthan
Affiliation:
Department of Physics, University of Illinois at Chicago, Chicago., IL60607-7059, USA.
J-P Faurie
Affiliation:
Department of Physics, University of Illinois at Chicago, Chicago., IL60607-7059, USA. CRHEA-CNRS, rue Bernard Gregory, Oak Ridge, 06560, Valbonne, France.
P. Gibart
Affiliation:
CRHEA-CNRS, rue Bernard Gregory, Oak Ridge, 06560, Valbonne, France.
Get access

Extract

Wide gap nitride semiconductors have attracted significant attention recently due to their promising performance as short-wavelength light emitting diodes (LEDs) and blue lasers. One interesting issue concerning GaN is that the material is relatively insensitive to the presence of a density of dislocations which is six orders of magnitude higher than that for III-V arsenide and phosphide based LEDs. Although it is well known that these dislocations originate at the film-substrate interface during film growth, thread through the whole epilayer with line direction along <0001> and are perfect dislocations with Burgers vectors of a, c, or c+a, the reason why they have such a small effect on the properties of GaN is unclear.

To develop a fundamental understanding of the properties of these dislocations, the core structures are studied here by high resolution Z-contrast imaging in a 300kV VG HB603 scanning transmission electron microscope (STEM) with a resolution of 0.13nm.

Type
Microscopy of Semiconducting and Superconducting Materials
Information
Microscopy and Microanalysis , Volume 4 , Issue S2: Proceedings: Microscopy & Microanalysis '98, Microscopy Society of America 56th Annual Meeting, Microbeam Analysis Society 32nd Annual Meeting, Atlanta, Georgia July 12-16, 1998 , July 1998 , pp. 660 - 661
Copyright
Copyright © Microscopy Society of America

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

References:

1.Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyohu, H., and Sguimoto, Y., Jpn. J. Appl. Phys., 35, L74 (1996).CrossRefGoogle Scholar
2.Eisner, J., Jones, R., Sitch, P.K., Porezag, V.D., Elstner, M., Frauenheim, Th., Heggie, M.I., Oberg, S. and Briddon, P.R., Phys. Rev. Lett., 79, p. 3672 (1997).CrossRefGoogle Scholar
3. Research sponsored by DOE under grant number DOE DE-GF02-96ER45610 and contract DEAC05- 96OR22464 with Lockheed Martin Energy Research Corporation, and by an appointment to the ORNL Postdoctoral Research Program administered jointly by ORNL and ORISEGoogle Scholar