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An SEM Investigation of Annealing Encapsulants for SiC

Published online by Cambridge University Press:  02 July 2020

M. H. Ervin
Affiliation:
U.S. Army Research Laboratory, MS: SE-RL, 2800 Powder Mill Road, Adelphi, MD20783-1197
K. A. Jones
Affiliation:
U.S. Army Research Laboratory, MS: SE-RL, 2800 Powder Mill Road, Adelphi, MD20783-1197
M. A. Derenge
Affiliation:
U.S. Army Research Laboratory, MS: SE-RL, 2800 Powder Mill Road, Adelphi, MD20783-1197
K. W. Kirchnef
Affiliation:
U.S. Army Research Laboratory, MS: SE-RL, 2800 Powder Mill Road, Adelphi, MD20783-1197
M.C. Wood
Affiliation:
U.S. Army Research Laboratory, MS: SE-RL, 2800 Powder Mill Road, Adelphi, MD20783-1197
P. B. Shah
Affiliation:
U.S. Army Research Laboratory, MS: SE-RL, 2800 Powder Mill Road, Adelphi, MD20783-1197
R. D. Vispute
Affiliation:
Physics Department, University of Maryland, College Park, MD20742
T. Venkatesan
Affiliation:
Physics Department, University of Maryland, College Park, MD20742
C. Thomas
Affiliation:
Electrical Engineering Department, Cornell University, Ithaca, NY14853
M. G. Spencer
Affiliation:
Electrical Engineering Department, Cornell University, Ithaca, NY14853

Extract

Advancing technology continues to place greater and greater demands on semiconductor devices. It is clear that Si technology alone will not be able to meet all of these demands. Silicon Carbide (SiC) is a promising material for highpower and high-temperature applications, such as SiC devices for controlling power in a more electric vehicle in which the SiC device is cooled by the engine oil (200 C.) SiC is well suited for high-power/temperature applications due to its large bandgap of 3.03 eV (for 6H), high breakdown electric field of 2.4 x 106 V/cm (again for 6H), thermal stability, and chemical inertness. These properties hold the promise of reliable and robust performance, but the latter two also present challenges to fabricating such devices. For instance, a key part of making devices involves selected area doping. This is typically accomplished with ion implantation, because the rate of diffusion is so low, followed with an anneal to remove the implant damage and electrically activate the dopant.

Type
Semiconductors
Copyright
Copyright © Microscopy Society of America

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References

1. Jones, K. A. et al., Journal of Material Science and Engineering, B61B62(1999)281.Google Scholar

2. Seshadri, S. et al., Applied Physics Letters, 72(1998)2026.CrossRefGoogle Scholar

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