Skip to main content Accessibility help
×
Home

Surface activity of magnesium during GaN molecular beam epitaxial growth

  • V. Ramachandran (a1), R. M. Feenstra (a1), J. E. Northrup (a2) and D. W. Greve (a2)

Abstract

Exposure of wurtzite GaN films grown on Si-polar 6H-SiC(0001) to magnesium during molecular beam epitaxy (MBE) has been studied. In the nitrogen rich regime of MBE growth, GaN films are known to grow with rough morphology. We observe on GaN(0001) that small doses of Mg act as a surfactant, smoothing out this roughness. An interpretation of this surfactant behavior is given in terms of electron counting arguments for the surface reconstructions. Previously, we have reported that larger doses of Mg lead to inversion of the Ga-polar GaN film to produce N-polar GaN. Several Mg-related reconstructions of the resulting GaN(000 ) surface are reported.

  • View HTML
    • Send article to Kindle

      To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

      Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

      Find out more about the Kindle Personal Document Service.

      Surface activity of magnesium during GaN molecular beam epitaxial growth
      Available formats
      ×

      Send article to Dropbox

      To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

      Surface activity of magnesium during GaN molecular beam epitaxial growth
      Available formats
      ×

      Send article to Google Drive

      To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

      Surface activity of magnesium during GaN molecular beam epitaxial growth
      Available formats
      ×

Copyright

References

Hide All
[1] Beaumont, B., Haffouz, S. and Gibart, P., Appl. Phys. Lett. 72, 921 (1998).
[2] Zhao, Y., Deng, F., Lau, S. S., and Tu, C. W., J. Vac. Sci. Technol. 16, 1297 (1998).
[3] Widmann, F., Daudin, B., Feuillet, G., Pelekanos, N., and Rouvière, J. L., Appl. Phys. Lett. 73, 2642 (1998).
[4] Tarsa, E. J., Heying, B., Wu, X. H., Fini, P., DenBaars, S. P., and Speck, J. S., J. Appl. Phys. 82, 5472 (1997).
[5] Smith, A. R., Ramachandran, V., Feenstra, R. M., Greve, D. W., Ptak, A., Myers, T. H., Sarney, W. L., Salamanca-Riba, L., Shin, M.-S. and Skowronski, M., MRS Internet J. Nitride Semicond. Res. 3, 12 (1998).
[6] Ramachandran, V., Brady, M. F., Smith, A. R., Feenstra, R. M. and Greve, D. W., J. Electron. Mater. 27, 308 (1998).
[7] Ramachandran, V., Smith, A. R., Feenstra, R. M. and Greve, D. W., J. Vac. Sci. Technol. A 17, 1289 (1999).
[8] Smith, A. R., Feenstra, R. M., Greve, D. W., Shin, M. S., Skowronski, M., Neugebau, J. er, , Northrup, J. E., Vac, J.. Sci. Technol. B 16, 2242 (1998).
[9] Cheng, T. S., Foxon, C. T., Jeffs, N. J., Dewsnip, D. J., Flannery, L., Orton, J. W., Novikov, S. V., Ya Ber, B. and Kudriavtsev, Yu A., MRS Internet J. Nitride Semicon. Res. 2, 13 (1997).
[10] Ramachandran, V., Feenstra, R. M., Sarney, W. L., Salamanca-Riba, L., Northrup, J. E., Romano, L. T., and Greve, D. W., Appl. Phys. Lett. 75, 808 (1999).
[11] Smith, A. R., Feenstra, R. M., Greve, D. W., Neugebauer, J., and Northrup, J., Phys. Rev. Lett. 79, 3934 (1997).
[12] Bungaro, C., Rapcewicz, K., and Bernholc, J., Phys. Rev. B 59, 9771 (1999).
[13] Zywietz, T., Neugebauer, J., and Scheffler, M., Appl. Phys. Lett. 73, 487 (1998).
[14] Ramachandran, V., Lee, C. D., Feenstra, R. M., Smith, A. R., Northrup, J. E., and Greve, D. W., J. Cryst. Growth 126, to appear.
[15] Iwata, K., Asahi, H., Yu, S. J., Asami, K., Fujita, H., Fushida, M., and Gonda, S., Jpn. J. Appl. Phys. 35, L289 (1996).
[16] Xue, Q. K., Xue, Q. Z., Bakhtizin, R. Z., Hasegawa, Y., Tsong, I. S. T., Sakurai, T., and Ohno, T., Phys. Rev. Lett. 82, 3074 (1999).

Surface activity of magnesium during GaN molecular beam epitaxial growth

  • V. Ramachandran (a1), R. M. Feenstra (a1), J. E. Northrup (a2) and D. W. Greve (a2)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed