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Room Temperature Laser Action in Laterally Overgrown GaN Pyramids on (111) Silicon

  • S. Bidnyk (a1), B. D. Little (a1), Y. H. Cho (a1), J. Krasinski (a1), J. J. Song (a1), W. Yang (a2) and S. A. McPherson (a2)...

Abstract

Single and multi-mode room temperature laser action was observed in GaN pyramids under strong optical pumping. The 5- and 15-micron-wide hexagonal-based pyramids were laterally overgrown on a patterned GaN/AlN seeding layer grown on a (111) silicon substrate by metal-organic chemical vapor deposition. The pyramids were individually pumped, imaged, and spectrally analyzed through a high magnification optical system using a high density pulsed excitation source. We suggest that the cavity formed in a pyramid is of a ring type, formed by total internal reflections of light off the pyramids’ surfaces. The mode spacing of the laser emission was found to be correlated to the size of pyramids. The effects of pyramid geometry and pulse excitation on the nature of laser oscillations inside of the pyramids is discussed. Practical applications of the results for the development of light-emitting pixels and laser arrays are suggested.

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Copyright

Footnotes

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MRS Internet J. Nitride Semicond. Res. 4S1, G6.48 (1999)

Footnotes

References

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1 See, for example, Song, J. J. and Shan, W., in Physics and Applications of Group III Nitrides Semiconductor Compounds, edited by Gil, B. (Oxford University Press, London, 1998).
2 Bidnyk, S., Schmidt, T. J., Cho, Y. H., Gainer, G. H., Song, J. J., Keller, S., Mishra, U. K., and DenBaars, S. P., Appl. Phys. Lett. 72, 1623 (1998).
3 Bidnyk, S., Little, B. D., Schmidt, T. J., Krasinski, J., and Song, J. J., Proc. SPIE 3419, pp. 35-43 (1998).
4 Bidnyk, S., Little, B. D., Schmidt, T. J., Cho, Y. H., Krasinski, J., Song, J. J., Goldenberg, B., Perry, W. G., Bremser, M. D., and Davis, R. F., to be published in J. Appl. Phys.
5 Nakamura, S., Senoh, M, Nagahama, S, Iwasa, N, Yamada, T, Matsushita, T, Kiyoku, H, Sugimoto, Y, Kozaki, T, Umemoto, H, Sano, M., Chocho, K, Jpn. J. Appl. Phys. 37, L309 (1998).
6 Kato, Y., Kitamura, S., Hiramatsu, K., and Sawaki, N., J. Crystal Growth 144, 133 (1994).
7 Kitamura, S., Hiramatsu, K., and Sawaki, N., Jpn. J. Appl. Phys. 34, L1184 (1995).
8 Song, J. J., Fischer, A. J., Schmidt, T. J., Bidnyk, S., and Shan, W., Nonlinear Optics Vol. 18 (2-4), 269 (1997).
9 Yang, W., McPherson, S. A., Mao, Z., McKernan, S., and Carter, C. B., (unpublished); Zheleva, T. S., Nam, O.-H., Bremser, M. D., and Davis, R. F., Appl. Phys. Lett. 71, 2472 (1997).
10 Bidnyk, S., Little, B. D., Cho, Y. H., Krasinski, J., Song, J. J., Yang, W., and McPherson, S. A., Appl. Phys. Lett. 73, 2242 (1998).
11 Yang, X. H., Schmidt, T. J., Shan, W., Song, J. J., and Goldenberg, B., Appl Phys. Lett. 66, 1 (1995).
12 Ejder, E., Phys. Status Solidi A 6, 445 (1971).
13 Bidnyk, S., Schmidt, T. J., Park, G. H., and Song, J. J., Appl. Phys. Lett. 71, 729 (1997).
14 Iga, K., Kinoshita, S., and Koyama, F., Electron. Lett. 23, 134 (1987).
15 Koyama, F., Tomomatsu, K., and Iga, K., Appl. Phys. Lett. 52, 528 (1988).

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