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Research on GaN MODFET's

  • L. Eastman (a1), J. Burm (a1), W. Schaff (a1), M. Murphy (a1), K. Chu (a1), H. Amano (a2) and I. Akasaki (a2)...

Abstract

Initial results on 0.25 μm gate MODFET's have yielded ft=21.4 GHz and fmax=77.5 GHz. These devices have characteristics that agree with the gradual channel model dominated by the electron mobility. The AlGaN/GaN structure, grown on sapphire substrates, are polycrystalline, and thus yield low mobility (<100cm2/Vs) at low electron sheet density. Using a simple model, design optimization predicts electron sheet density values of 7.3 × 1012 cm−2 in thin, 3 nm quantum wells for single-sided doping with 5 nm spacer for use in future high frequency Al0.4Ga0.6N/In0.25Ga0.75N/GaN MODFET's with gate lengths of 0.10 μm. Double sided doping with 5 nm spacers would yield a sheet density of 1.4 × 1013cm−2 in such 3 nm quantum wells.

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Research on GaN MODFET's

  • L. Eastman (a1), J. Burm (a1), W. Schaff (a1), M. Murphy (a1), K. Chu (a1), H. Amano (a2) and I. Akasaki (a2)...

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