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The Polarity of GaN: a Critical Review

  • E. S. Hellman (a1)

Abstract

GaN, AlN and InGaN have a polar wurtzite structure and epitaxial films of these materials typically grow along the polar axis. Although the polarity of these nitrides has been studied by quite a number of techniques, many results in the literature are in conflict. In this paper an attempt is made to lay out a set of polarity assignments to provide a context for discussion of these results. A “standard framework” is proposed to correlate the disparate results, and the framework is used to draw general conclusions about the polarity of bulk crystals, VPE and MBE epitaxial films, and devices.

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[a] Zincblende GaN is typically grown along a non-polar axis, in the manner of GaAs growth.
[1] Nakamura, Shuji, Fasol, Gerhard, The Blue Laser Diode - GaN based Light Emitters and Lasers (Springer-Verlag, Heidelberg, 1997) .
[2] See the MIJ-NSR recommendations for polarity nomenclature at http://nsr.mij.mrs.org/info/diktats.html
[3] Sasaki, T., Matsuoka, T., J. Appl. Phys. 64, 4531-4535 (1988).
[4] Asif Khan, M., Kuznia, J. N., Olson, D. T., Kaplan, R., J. Appl. Phys. 73, 3108-3110 (1993).
[5] “2-fold and 3-fold Surface reconstructions on (0 0 0 1) GaN”, Hellman, E. S., paper N3.38 at the 1996 Fall MRS Meeting, Boston
[6] Kung, P, Saxler, A, Zhang, X, Walker, D, Lavado, R, Razeghi, M, Appl. Phys. Lett. 69, 2116-2118 (1996).
[7] Nicholls, J. F. H.. Gallagher, H., Henderson, B., Trager-Cowan, C., Middleton, P. G., O’Donnell, K. P. Cheng, T. S., Foxon, C. T., Chai, B. H. T., Mater. Res. Soc. Symp. Proc. 395, 535-539 (1996).
[8] Kryliouk, O. M., Dann, T. W., Anderson, T. J., Maruska, H. P., Zhu, L. D., Daly, J. T., Lin, M., Norris, P., Chai, H. T., Kisker, D. W., Li, J. H., Jones, K. S., Mater. Res. Soc. Symp. Proc. 449, 123-128 (1997).
[9] Johnson, M. A. L., Fujita, S., Rowland, W. H., et al, Sol. St. Electr. 41, 213-218 (1997).
[10] Seelmann-Eggebert, M., Weyher, J. L., Obloh, H., Zimmermann, H., Rar, A., Porowski, S., Appl. Phys. Lett. 71, 2635-2637 (1997).
[11] Nowak, G., Krukowski, S., Grzegory, I., Porowski, S., Baranowski, J.M., Pakula, K., Zak, J., MRS Internet J. Nitride Semicond. Res. 1, 5 (1996).
[12] Ponce, F. A., Van de Walle, C. G., Northrup, J. E., Phys. Rev. B 53, 7473-7478 (1996).
[13] Di Felice, R., Northrup, J. E., Neugebauer, J., Phys. Rev. B 54, R17351 (1996).
[14] Liliental-Weber, Z., Ruvimov, S., Kisielowski, Ch., Chen, Y., Swider, W., Washburn, J., Newman, N., Liu, A, Gassmann, , , X., Schloss, L., Weber, E. R., Grzegory, I., Bockowski, M., Jun, J., Suski, T., Pakula, K., Baranowski, J., Porowski, S., Amano, H., Akasaki, I., Mater. Res. Soc. Symp. Proc. 395, 351 (1996).
[15] Ponce, F.A., Bour, D.P., Young, W.T., Saunders, M., Steeds, J.W., Appl. Phys. Lett. 69, 337-339 (1996).
[16] Rouviere, J. L., Arlery, M., Niebuhr, R., Bachem, K. H., Briot, Olivier, MRS Internet J. Nitride Semicond. Res. 1, 33 (1996).
[17] Vermaut, P., Ruterana, P., Nouet, G., Phil. Mag. A 76, 1215-1234 (1997).
[18] Cherns, D, Young, WT, Steeds, JW, Ponce, FA, Nakamura, S, Phil. Mag. A 77, 273-281 (1998).
[19] Ponce, F. A., Young, W. T., Cherns, D., Steeds, J. W., Nakamura, S., Mater. Res. Soc. Symp. Proc. 449, 405-410 (1997).
[20] Romano, LT, Northrup, JE, O’Keefe, MA, Appl. Phys. Lett. 69, 2394-2396 (1996).
[21] Romano, L. T., Myers, T. H., Appl. Phys. Lett. 71, 3486 (1997).
[22] Daudin, B, Rouviere, JL, Arlery, M, Appl. Phys. Lett. 69, 2480-2482 (1996).
[23] Crawford, Devin, Ph. D. Dissertation
[24] Sung, M. M., Ahn, J., Bykov, V., Rabalais, J. W., Koleske, D. D., Wickenden, A. E., Phys. Rev. B 54, 14652-14663 (1996).
[25] Ahn, J., Sung, M. M., Rabalais, J. W., Koleske, D. D., Wickenden, A. E., J. Chem. Phys. 107, 9577-9584 (1997).
[26] Weyher, J. L., Müller, S., Grzegory, I., Porowski, S., J. Cryst. Growth 182, 17-22 (1997).
[27] Sun, C. J., Kung, P., Saxler, A., Ohsato, H., Bigan, E., Razeghi, M., Gaskill, D. K., J. Appl. Phys. 76, 236-241 (1994).
[28] Hellman, E. S., Buchanan, D. N. E., unpublished (1998).
[29] Rapcewicz, K., Nardelli, M. B., Bernholc, J., Phys. Rev. B 56, 12725-12728 (1997).
[30] Hellman, E. S., Buchanan, D. N. E., Wiesmann, D., Brener, I., MRS Internet J. Nitride Semicond. Res. 1, 16 (1996).
[31] Hamdani, F., Botchkarev, A. E., Tang, H., Kim, W., Morkoç, H., Appl. Phys. Lett. 71, 3111-3113 (1997).
[32] Suscavage, M. J., Ryder, D. F., Yip, P. W., Mater. Res. Soc. Symp. Proc. 449, 283-288 (1997).
[33] Nagahara, M, Miyoshi, S, Yaguchi, H, et al., J. Cryst. Growth 145, 197-202 (1994).
[34] Hong, CH, Wang, K, Pavlidis, D, J. Electron. Mater. 24, 213-218 (1995).
[35] Yang, J. W., Kuznia, J. N., Chen, Q. C., Asif Khan, M., George, T., De Graef, M., Mahajan, S., Appl. Phys. Lett. 67, 3759-3761 (1995).
[36] Cheng, T. S., Foxon, C. T., Jeffs, N. J., Hughes, O. H., Ren, B. G., Xin, Y., Brown, P. D., Humphreys, C. J., Andranov, A. V., Lacklison, D. E., Orton, J. W., Halliwell, M., MRS Internet J. Nitride Semicond. Res. 1, 32 (1996).
[37] Baranowski, J. M., Liliental-Weber, Z., Korona, K., Pakula, K., Stepniewski, R., Wysmolek, A., Grzegory, I., Nowak, G., Porowski, S., Monemar, B., Bergman, P., Mater. Res. Soc. Symp. Proc. 449, 393-404 (1997).
[38] Bykhovski, Alexei, Gelmont, Boris, Shur, Michael, J. Appl. Phys. 74, 6734-6739 (1993).
[39] Asbeck, P.M., Yu, E.T., Lau, S.S., Sullivan, G.J., Van Hove, J., Redwing, J., Electron. Lett. 33, 1230-1231 (1997).
[40] Gaska, R, Yang, JW, Osinsky, A, Bykhovski, AD, Shur, MS, Appl. Phys. Lett. 71, 3673 (1997).
[41] Gaska, R., Yang, J. W., Bykhovski, A. D., Shur, M. S., Appl. Phys. Lett. 71, 3817-3819 (1997).
[42] Gaska, R., Yang, J. W., Bykhovski, A. D., Shur, M. S., Kaminskii, V. V., Soloviov, S., Appl. Phys. Lett. 72, 64-66 (1998).
[43] Bernardini, F., Fiorentini, V., Vanderbilt, D., Phys. Rev. B 56, R10024 (1997).
[44] Kisielowski, C., Krüger, J., Ruvimov, S., Suski, T., Ager, J. W., Jones, E., Lilienthal-Weber, Z., Rubin, M., Bremser, M. D., Davis, R. F., Phys. Rev. B 54, 17745 (1996).
[45] Bernardini, F., Fiorentini, V., unpublished (1998).
[46] Hacke, P, Feuillet, G, Okumura, H, Yoshida, S, Appl. Phys. Lett. 69, 2507-2509 (1996).
[47] IWATA, K, ASAHI, H, SJ, YU, ASAMI, K, FUJITA, H, FUSHIDA, M, GONDA, S, Jpn. J. Appl. Phys. 35, L289 (1996).
[48] Van Hove, J. M., Carpenter, G., Nelson, E., Wowchak, A., Chow, P. P., J. Cryst. Growth 164, 154 (1996).
[49] Wong, W. S., Li, N. Y., Dong, H. K., Deng, F., Lau, S. S., Tu, C. W., Hays, J., Bidnyk, S., Song, J. J., J. Cryst. Growth 164, 159 (1996).
[50] Johnson, M. A. L., Fujita, Shizuo, Rowland, W. H., Bowers, K. A., Hughes, W. C., He, Y. W., El-Masry, N. A., Cook, J. W., Schetzina, J. F., Ren, J., Edmond, J. A., J. Vac. Sci. Technol. B 14, 2349-2353 (1996).
[51] Hughes, W. C., Rowland, W. H., Johnson, M. A. L., Fujita, Shizuo, Cook, J. W., Schetzina, J. F., Ren, J., Edmond, J. A., J. Vac. Sci. Technol. B 13, 1571-1577 (1995).
[52] Molnar, R.J., Singh, R., Moustakas, T.D., J. Electron. Mater. 24, 275 (1995).
[53] Hellman, E. S., Brandle, C. D., Schneemeyer, L. F., Wiesmann, D., Brener, I., Siegrist, T., Berkstresser, G. W., Buchanan, D. N. E., Hartford, Jr., MRS Internet J. Nitride Semicond. Res. 1, 1 (1996).
[54] Smith, A. R., Feenstra, R. M., Greve, D. W., Neugebauer, J., Northrup, J. E., Phys. Rev. Lett. 79, 3934 (1997).
[55] Smith, A. R., Feenstra, R. M., Greve, D. W., Shin, M. S., Skowronski, M., Neugebauer, J., Northrup, J. E., Appl. Phys. Lett. 72, 2114-2116 (1998).
[56] Held, Ruediger, Seutter, Sean M., Ishaug, Brian E., Parkhomovsky, Alexander, Dabiran, Amir M., Cohen, Philip I., Nowak, Grzegorz, Grzegory, Izabella, Porowski, Sylwester, unpublished (1998).
[57] Van Hove, J., private communication
[58] Li, L. K., Alperin, J., Wang, W. I., Look, D. C., Reynolds, D. C., J. Vac. Sci. Technol. B 16, 1275-1277 (1998).
[59] Newman, N., Ross, J., Rubin, M., Appl. Phys. Lett. 62, 1242-1244 (1993).
[60] Bockowski, M., Grzegory, I., Krukowski, S., Leszczynski, M., Litwin-Staszewska, E., Lucznik, B., Nowak, G., Suski, T., Teisseyre, H., Weyher, J. L., Wroblewski, S., Porowski, M., unpublished (1998).
[61] Keller, S., Keller, B. P., Wu, Y.-F., Heying, B., Kapolnek, D., Speck, J. S., Mishra, U. K., DenBaars, S. P., Appl. Phys. Lett. 68, 1525-1527 (1996).
[62] Di Felice, R., Northrup, J. E., unpublished (1998).
[63] Wu, X. H., Kapolnek, D., Tarsa, E. J., Heying, B., Keller, S., Keller, B. P., Mishra, U. K., DenBaars, S. P., Speck, J. S., Appl. Phys. Lett. 68, 1371-1373 (1996).
[64] Aktas, O., Fan, Z.F., Botchkarev, A., Mohammad, S.N., Roth, M., Jenkins, T., Kehias, L., Morkoc, H., IEEE Electron Dev. Lett. 18, 293-295 (1997).
[65] Takeuchi, T., Sota, S., Katsuragawa, M., Komori, M., Takeuchi, H., Amano, H., Akasaki, I., Jpn. J. Appl. Phys. 36, L382 (1997).
[66] Iyechika, Y., Ono, Y., Takada, T., Mater. Sci. Forum 264/268, 1307-1310 (1998).
[67] Im, J. S., Kollmer, H., Off, J., Sohmer, A., Scholz, F., Hangleiter, A., Phys. Rev. B 57, R9435 (1998).
[68] Caridi, E., Chang, T. Y., Goosen, K. W., Eastman, L. F., Appl. Phys. Lett. 56, 659 (1990).
[69] Chichibu, Shigefusa, Sota, Takayuki, Wada, Kazumi, Nakamura, Shuji, J. Vac. Sci. Technol. B 16, 2204-2214 (1998).
[70] Meeker, T. R., IEEE Trans. Ultrason. Ferr. Freq. Contr. 43, 717 (1996).

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