Skip to main content Accessibility help
×
Home

Optical and Structural Properties of AlGaN/GaN Quantum Wells Grown by Molecular Beam Epitaxy

  • Nicolas Grandjean (a1), Jean Massies (a1), Mathieu Leroux (a1), Marguerite Laügt (a1), Pierre Lefebvre (a2), Bernard Gil (a2), Jacques Allègre (a2) and Bigenwald Pierre (a3)...

Abstract

AlGaN/GaN quantum well (QWs) were grown on (0001) sapphire substrates by molecular beam epitaxy (MBE) using ammonia as nitrogen precursor. The Al composition in the barriers was varied between 8 and 27 % and the well thickness from 4 to 17 monolayers (MLs, 1ML = 2.59Å). X-ray diffraction (XRD) experiments are used to investigate the strain state of both the well and the barriers. The QW transition energy are measured by low temperature photoluminescence (PL). A large quantum confined Stark effect is observed leading to QW luminescence much lower than the emission line of the GaN buffer layer for well width above a certain critical thickness. The built-in electric field responsible for such a phenomenon is deduced from fit of the PL data. Its magnitude is of several hundred kV/cm and increases linearly with the Al composition.

  • View HTML
    • Send article to Kindle

      To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

      Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

      Find out more about the Kindle Personal Document Service.

      Optical and Structural Properties of AlGaN/GaN Quantum Wells Grown by Molecular Beam Epitaxy
      Available formats
      ×

      Send article to Dropbox

      To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

      Optical and Structural Properties of AlGaN/GaN Quantum Wells Grown by Molecular Beam Epitaxy
      Available formats
      ×

      Send article to Google Drive

      To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

      Optical and Structural Properties of AlGaN/GaN Quantum Wells Grown by Molecular Beam Epitaxy
      Available formats
      ×

Copyright

Footnotes

Hide All

MRS Internet J. Nitride Semicond. Res. 4S1, G11.7 (1999)

Footnotes

References

Hide All
[1] Nakamura, S. and Fasol, G., ‘The Blue Laser Diode’, Springer - Berlin (1997)
[2] Niebuhr, R., Bachem, K.H., Behr, D., Hoffman, C., Kaufmann, U., Lu, Y., Santic, B., Wagner, J., Arlery, M., Rouvière, J.L. and Jürgensen, H., Mat. Res. Soc. Symp. Proc. 449, 769 (1997).
[3] Smith, M., Lin, J.Y., Jiang, H.X., Khan, A., Chen, Q., Salvador, A., Botchkarev, A. and Morkoç, H., Mat. Res. Soc. Symp. Proc. 449, 829 (1997).
[4] Grandjean, N. and Massies, J., Appl. Phys. Lett., 73, 1260 (1998).
[5] Im, J.M., Kollmer, H., Off, J., Sohmer, A., Scholz, F. and Angleiter, A., Mat. Res. Soc. Symp. Proc. 482, 513 (1998)
[6] Im, J.S., Kollmer, H., Off, J., Sohmer, A., Scholz, F., and Hangleiter, A., Phys. Rev. B 57, R9435 (1998)
[7] Leroux, M., Grandjean, N., Laügt, M., Massies, J., Gil, B., Lefebvre, P., and Bigenwald, P., Phys. Rev. B 58, R13371 (1998)
[8] Lefebvre, P., Allègre, J., Gil, B., Mathieu, H., Bigenwald, P., Grandjean, N., Leroux, M. and Massies, J., Phys. Rev. B, to be published.
[9] Bernardini, F., Fiorentini, V. and Vanderbilt, D., Phys. Rev. B 56, R10024 (1997)
[10] Bernardini, F. and Fiorentini, V., Phys. Rev. B 57, R9427 (1998)
[11] Grandjean, N. and Massies, J., Appl. Phys. Lett. 71, 1816 (1997)
[12] Honda, T., Miyamoto, T., Sakaguchi, T., Kawanishi, H., Koyama, F. and Iga, K., J. Cryst. Growth 189/190, 644 (1998)

Optical and Structural Properties of AlGaN/GaN Quantum Wells Grown by Molecular Beam Epitaxy

  • Nicolas Grandjean (a1), Jean Massies (a1), Mathieu Leroux (a1), Marguerite Laügt (a1), Pierre Lefebvre (a2), Bernard Gil (a2), Jacques Allègre (a2) and Bigenwald Pierre (a3)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed