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Morphology and optical properties of cubic phase GaN epilayers grown on (001) Si

  • M. Godlewski (a1), E. M. Goldys (a2), M. R. Philips (a3), J. P. Bergman (a4), B. Monemar (a4), R. Langer (a5) and A. Barski (a5)...

Abstract

Optical properties of GaN epilayers of a cubic phase are studied. We show a strong influence of the sample morphology on intensity of the edge emission. Whereas edge luminescence is reduced at the grain boundaries, red emission is spatially homogeneous.

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Keywords

Morphology and optical properties of cubic phase GaN epilayers grown on (001) Si

  • M. Godlewski (a1), E. M. Goldys (a2), M. R. Philips (a3), J. P. Bergman (a4), B. Monemar (a4), R. Langer (a5) and A. Barski (a5)...

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