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Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy

  • E. Frayssinet (a1), B. Beaumont (a1), J. P. Faurie (a1), Pierre Gibart (a1), Zs. Makkai (a2), B. Pécz (a2), P. Lefebvre (a3) and P. Valvin (a3)...

Abstract

GaN/sapphire layers have been grown by Metal Organic Vapour Phase Epitaxy (MOVPE). An amorphous silicon nitride layer is deposited using a SiH4/NH3 mixture prior to the growth of the low temperature GaN buffer layer. Such a process induces a 3D nucleation at the early beginning of the growth, resulting in a kind of maskless ELO process with random opening sizes. This produces a significant decrease of the threading dislocation (TD) density compared to the best GaN/sapphire templates. Ultra Low Dislocation density (ULD) GaN layers were obtained with TD density as low as 7×107cm−2 as measured by atomic force microscopy (AFM), cathodoluminescence and transmission electron microscopy (TEM). Time-resolved photoluminescence experiments show that the lifetime of the A free exciton is principally limited by capture onto residual donors, similar to the situation for nearly dislocation-free homoepitaxial layers.

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References

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Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy

  • E. Frayssinet (a1), B. Beaumont (a1), J. P. Faurie (a1), Pierre Gibart (a1), Zs. Makkai (a2), B. Pécz (a2), P. Lefebvre (a3) and P. Valvin (a3)...

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