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Integration of PLZT and BST Family Oxides with GaN

  • Andrei V. Osinsky (a1), Vladimir N. Fuflyigin (a1), Feiling Wang (a1), Peter I.Vakhutinsky (a1) and Peter E.Norris (a1)...

Abstract

Recent advances in the processing of complex-oxide materials has allowed us to monolithically grow ferroelectrics of lead lanthanum zirconate titanate (PLZT) and barium strontium titanate (BST) systems on a GaN/sapphire structure. High quality films of PLZT and BST were grown on GaN/c-Al2O3 in a thickness range of 0.3-5 µm by a solgel technique. Field-induced birefringence, as large as 0.02, was measured from a PLZT layer grown on a buffered GaN/sapphire structure. UV illumination was found to result in more symmetrical electrooptic hysteresis loop. BST films on GaN demonstrated a low frequency dielectric constant of up to 800 with leakage current density as low as 5.5⋅10−8A/cm2.

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Copyright

References

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1. Davydov, A., Anderson, T.J., in III-V Nitride Materials and Processes, edited by Moustakas, T.D., Proc. volume 98-18 (Boston, MA, 1998), in press
2. Fuflyigin, V., Li, K.K., Wang, F., Jiang, H., Liu, S., Zhao, J., Norris, P., Yip, P., in High-Temperature Superconductors and Novel Inorganic Materials, edited by Tendeloo, G. Van, (Kluwer Academic. Publ. 1999), p.279-284
3. Fuflyigin, V., Osinsky, A., Wang, F. to be published in Applied Physics Letters.
4. Wang, F., Furman, E., Haertling, G.H., J. Appl. Phys. 78, 9 (1995)

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