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Influence of the First Preparation Steps on the Properties of GaN Layers Grown on 6H-SiC by MBE

  • R. Lantier (a1), A. Rizzi (a1) (a2), D. Guggi (a1), H. Lüth (a1), B. Neubauer (a3), D. Gerthsen (a3), S. Frabboni (a2), G. Colì (a4) and R. Cingolani (a4)...

Abstract

The Gan heteroepitaxy on 6H-SiC is affected by the bad morphology of the substrate surface. We performed a hydrogen etching at 1550oC on the 6H-SiC(0001) substrates to obtain atomically flat terraces. An improvement of the structural properties of GaN grown by MBE on such substrates after deposition of a LT-AlN buffer layer is observed. A value of less than 220 arcsec of the FWHM of the XRD rocking curve, showing a reduced screw dislocations density, is comparable with the best results reported until now for thick GaN samples. Photoluminescence showed a structured near band edge emission spectrum with evidence of the A, B and C free exciton recombinations.

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Footnotes

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MRS Internet J. Nitride Semicond. Res. 4S1, G3.50(1999)

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References

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Influence of the First Preparation Steps on the Properties of GaN Layers Grown on 6H-SiC by MBE

  • R. Lantier (a1), A. Rizzi (a1) (a2), D. Guggi (a1), H. Lüth (a1), B. Neubauer (a3), D. Gerthsen (a3), S. Frabboni (a2), G. Colì (a4) and R. Cingolani (a4)...

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