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Indium incorporation and surface segregation during InGaN growth by molecular beam epitaxy: experiment and theory

  • Huajie Chen (a1), R. M. Feenstra (a1), J. E. Northrup (a2), Jörg Neugebauer (a3) and D.W. Greve (a4)...

Abstract

InGaN alloys with (0001) or (000) polarities are grown by plasma-assisted molecular beam epitaxy. Scanning tunneling microscopy images, interpreted using first-principles theoretical calculations, show that there is strong indium surface segregation on InGaN for both (0001) and (000) polarities. Evidence for the existence and stability of a structure containing two adlayers of indium on the In-rich InGaN(0001) surface is presented. The dependence on growth temperature and group III/V ratio of indium incorporation in InGaN is reported, and a model based on indium surface segregation is proposed to explain the observations.

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[1] Nakamura, Shuji, Fasol, Gerhard, The Blue Laser Diode - GaN based Light Emitters and Lasers (Springer-Verlag, Heidelberg, 1997) .
[2] Chen, Huajie, Smith, A.R., Feenstra, R.M., Greve, D.W., Northrup, J.E., MRS Internet J. Nitride Semicond. Res. 4S1, G9.5 (1999).
[3] Northrup, JE, Neugebauer, J, Phys. Rev. B 60, 8473-8476 (1999).
[4] Chen, H, Feenstra, RM, Northrup, JE, Zywietz, T, Neugebauer, J, Greve, DW, J. Vac. Sci. Technol. B 18, 2284-2289 (2000).
[5] Ramachandran, V, Brady, MF, Smith, AR, Feenstra, RM, Greve, DW, J. Electron. Mater. 27, 308-312 (1998).
[6] Ramachandran, V, Smith, AR, Feenstra, RM, J. Vac. Sci. Technol. A 17, 1289-1293 (1999).
[7] Chen, H, Feenstra, RM, Northrup, JE, Zywietz, T, Neugebauer, J, Phys. Rev. Lett. 85, 1902-1905 (2000).
[8] Northrup, JE, Neugebauer, J, Feenstra, RM, Smith, AR, Phys. Rev. B 61, 9932-9935 (2000).
[9] Harrison, W.A., Electronic Structure and the Properties of Solids (W. H. Freeman and Company, San Francisco, 1980) .
[10] Zywietz, T., Ph.D. Thesis, Technical University of Berlin, 1999
[11] Smith, A. R., Feenstra, R. M., Greve, D. W., Neugebauer, J., Northrup, J. E., Phys. Rev. Lett. 79, 3934 (1997).
[12] Tarsa, EJ, Heying, B, Wu, XH, Fini, P, DenBaars, SP, Speck, JS, J. Appl. Phys. 82, 5472-5479 (1997).
[13] Boettcher, T, Einfeldt, S, Kirchner, V, Figge, S, Heinke, H, Hommel, D, Selke, H, Ryder, PL, Appl. Phys. Lett. 73, 3232-3234 (1998).
[14] Averback, R., Riechert, H., Phys. Stat. Sol. A 176, 301 (1999).

Keywords

Indium incorporation and surface segregation during InGaN growth by molecular beam epitaxy: experiment and theory

  • Huajie Chen (a1), R. M. Feenstra (a1), J. E. Northrup (a2), Jörg Neugebauer (a3) and D.W. Greve (a4)...

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