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Improvement of Crystalline Quality of Group III Nitrides on Sapphire Using Low Temperature Interlayers

  • H. Amano, M. Iwaya, N. Hayashi, T. Kashima, M. Katsuragawa, T. Takeuchi, C. Wetzel and I. Akasaki (a1)...

Abstract

In organometallic vapor phase epitaxial growth of group III nitrides on sapphire, insertion of a low temperature interlayer is found to improve crystalline quality of AlxGa1−xN layer with x from 0 to 1. Here the effects of the low temperature deposited GaN or AlN interlayers on the structural quality of group III nitrides is discussed.

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Footnotes

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MRS Internet J. Nitride Semicond. Res. 4S1, G10.1 (1999)

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References

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Improvement of Crystalline Quality of Group III Nitrides on Sapphire Using Low Temperature Interlayers

  • H. Amano, M. Iwaya, N. Hayashi, T. Kashima, M. Katsuragawa, T. Takeuchi, C. Wetzel and I. Akasaki (a1)...

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