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High-Quality Al x Ga 1x N Using Low Temperature-Interlayer and its Application to UV Detector

  • M. Iwaya (a1), S. Terao (a1), N. Hayashi (a1), T. Kashima (a1), T. Detchprohm (a2), H. Amano (a1) (a2), I. Akasaki (a1) (a2), A. Hirano (a3) and C. Pernot (a3) (a4)...

Abstract

Low-temperature (LT-) AlN interlayer reduces tensile stress during growth of Al x Ga1 x N, while simultaneously acts as the dislocation filter, especially for dislocations of which Burger’s vector contains [0001] components. UV photodetectors using thus-grown high quality Al x Ga 1x N layers were fabricated. The dark current bellow 50 fA at 10 V bias for 10 μm strip allowing a photocurrent to dark current ratio greater than one even at 40 nW/cm2 have been achieved.

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References

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High-Quality Al x Ga 1x N Using Low Temperature-Interlayer and its Application to UV Detector

  • M. Iwaya (a1), S. Terao (a1), N. Hayashi (a1), T. Kashima (a1), T. Detchprohm (a2), H. Amano (a1) (a2), I. Akasaki (a1) (a2), A. Hirano (a3) and C. Pernot (a3) (a4)...

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