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Growth of Semi-insulating GaN Layer by Controlling Size of Nucleation Sites for SAW Device Applications

  • Jae-Hoon Lee (a1), Myoung-Bok Lee (a1), Sung-Ho Hahm (a1), Yong-Hyun Lee (a1), Jung-Hee Lee (a1), Young-HoBa (a2) and Hyun Kyung Cho (a3)...


Semi-insulating undoped GaN films were grown based on controlling the size of the nucleation sites through a special two-step growth method: First, 16 nm LT-GaN was annealed at 950 ° with a ramping time of 4 min, then the GaN was grown at this temperature for 1 min. Second, the growth temperature was increased to 1020° with a ramping time of 2 min and the GaN layer finally grown at 1020 ° for 40 min. The film grown by this sequence exhibited sheet resistance of up to 109 Ω/sq with mirror-like surface morphology. By slow ramping to 950° in the initial phase of growth, smaller grain sizes and higher nuclei densities were formed and the columnar growth mode along the c direction was dominant. The observation of higher resistance in two-step growth is believed due to the increased misorientation of nuclei when the growth proceeds during temperature ramping to 1020°. The fabricated saw filter on semi-insulating GaN exhibited a high velocity of 5342 m/s at center frequencies of 133.57 MHz and an electromechanical coupling coefficient(k2 ) of about 0.763 %, which was enhanced due to the improvement of surface morphology with high sheet resistance by the two- step ramping technique.



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[1] Nagahama, S., Yanamoto, T., Sano, M., Mukai, T., Appl. Phys. Lett. 79, 1948 (2001).
[2] Wu, Y-F., Kapolnet, D., Ibbetson, J. P., Parikh, P., Keller, B. P., Mishra, U. K., IEEE Electron Dev. Lett. 48, 586 (2001).
[3] Youn, D. -H., Kumar, V., Lee, J. -H., Schwindt, R., Chang, W. -J., Hong, J. -Y., Jeon, C. -M., Bae, S. -B., Lee, K. -S., Lee, J. -L., Lee, J. -H., Adesida, I., Electron. Lett. 39, 566 (2003).
[4] Wright, AF, J. Appl. Phys. 82, 2833-2839 (1997).
[5] Shur, M.S., Bykhovski, A.D., Gaska, R., MRS Internet J. Nitride Semicond. Res. 4S1, G1.6 (1999).
[6] Strite, S., Morkoç, H., J. Vac. Sci. Technol. B 10, 1237-1266 (1992).
[7] Lee, Suk-Hun, Jeong, Hwan-Hee, Bae, Sung-Bum, Choi, Hyun-Chul, Lee, Jung-Hee, Lee, Young-Hyun, IEEE Trans. Electr. Dev. 48, 524 (2001).
[8] Kuznetsov, N. I., Nikolaev, A. E., Zubilov, A. S., Melnik, Yu. V., Dmitriev, V. A., Appl. Phys. Lett. 75, 3138 (1999).
[9] Tang, H., We bb, J. B., Bardwell, J. A., Raymond, , Salzman, Joseph, Uzan-Saguy, C., Appl. Phys. Lett. 78, 757 (2001).
[10] Heikman, Sten, Keller, Stacia, DenBaars, Steven P., Mishra, Umesh K., Appl. Phys. Lett. 81, 439 (2002).
[11] Look, D. C., Reynolds, D. C., Jones, R. L., Kim, W., Aktas, O., Botchkarev, A., Salvador, A., Morkoc, H., Mater. Sci. Eng. B 44, 423 (1997).
[12] Bougrioua, Z., Moerman, I., Sharma, N., Wallis, R. H., Cheyns, J., Jacobs, K., Thrush, E. J., Considine, L., Beanland, R., Farvacque, J. L., Humphreys, C., J. Cryst. Growth 230, 573 (2001).
[13] Briot, O., Alexis, J. P., Sanchez, S., Gil, B., Aulombard, R. L., Sol. St. Electr. 41, 315 (1997).
[14] Ramer, J. C., Zheng, K., Kranenberg, C. F., Banas, M., Hersee, S. D., Mater. Res. Soc. Symp. Proc. 395, 225 (1996).
[15] Sugiura, L., Itaya, K., Nishio, J., Fujimoto, H., Kokubun, Y., J. Appl. Phys. 82, 4877 (1997).
[16] Desnica, U. V., Pavlovic, M., Fang, Z. -Q., Look, D. C., J. Appl. Phys. 92, 4126 (2002).
[17] Oila, J., Saarinen, K., Wickenden, A. E., Koleske, D. D., Henry, R. L., Twigg, M. E., Appl. Phys. Lett. 82, 1021 (2003).
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Materials Research Society Internet Journal of Nitride Semiconductor Research
  • ISSN: 1092-5783
  • EISSN: 1092-5783
  • URL: /core/journals/materials-research-society-internet-journal-of-nitride-semiconductor-research
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