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GaN based LED's with different recombination zones

  • M. Schauler (a1), C. Kirchner (a1), M. Mayer (a1), A. Pelzmann (a1), F. Eberhard (a1), Markus Kamp (a1), P. Unger (a1) and K. J. Ebeling (a1)...

Abstract

GaN based homo- and heterotype LED's have been fabricated and characterized which emit in the blue and ultra-violet part of the spectral range. Complete epitaxial LED layer sequences with different recombination zones have been grown using MOVPE as well as MBE. Subsequent to the material growth, chemically-assisted ion-beam etching and contact metallization are utilized to achieve full LED devices. MBE-grown homotype LED's reveal a peak in the output light spectrum at a wavelength of 372 nm with a linewidth being as narrow as 12 nm. GaN/InGaN LED's grown by MOVPE show visible single peak emission with linewidths of 23 nm. The optical output power as measured in a calibrated Ulbricht sphere is in the 1 μW regime.

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References

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[1] Nakamura, Shuji, Mukai, Takashi, Senoh, Masayuki, Appl. Phys. Lett. 64, 1687-1689 (1994).
[2] Schlotter, P, Schmitt, R, Schneider, J, Appl. Phys. A 64, 417-418 (1997).
[3] Kamp, M., Mayer, M., Pelzmann, A., Ebeling, K.J., Mater. Res. Soc. Symp. Proc. 449, 161-172 (1997).
[4] Reeves, GK, Sol. St. Electr. 23, 487-490 (1980).
[5] Nakamura, S., Mukai, T., Senoh, M., Jpn. J. Appl. Phys. 30, L1998 (1991).

Keywords

GaN based LED's with different recombination zones

  • M. Schauler (a1), C. Kirchner (a1), M. Mayer (a1), A. Pelzmann (a1), F. Eberhard (a1), Markus Kamp (a1), P. Unger (a1) and K. J. Ebeling (a1)...

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