Skip to main content Accessibility help
×
Home

Fabrication of GaN with Buried Tungsten (W) Structures Using Epitaxial Lateral Overgrowth (ELO) via LP-MOVPE

  • Hideto Miyake (a1), Motoo Yamaguchi (a1), Masahiro Haino (a1), Atsushi Motogaito (a1), Kazumasa Hiramatsu (a1), Shingo Nambu (a2), Yasutoshi Kawaguchi (a2), Nobuhiko Sawaki (a2), Yasushi Iyechika (a3), Takayoshi Maeda (a3) and Isamu Akasaki (a4)...

Abstract

A buried tungsten (W) mask structure with GaN is successfully obtained by epitaxial lateral overgrowth (ELO) technique via low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). The selectivity of GaN growth on the window region vs. the mask region is good. An underlying GaN with a striped W metal mask is easily decomposed above 500 °C by the W catalytic effect, by which radical hydrogen is reacted with GaN. It is difficult to bury the W mask because severe damage occurs in the GaN epilayer under the mask. It is found that an underlying AlGaN/GaN layer with a narrow W stripe mask width (mask/window = 2/2 μm) leads the ELO GaN layer to be free from damage, resulting in an excellent W-buried structure.

  • View HTML
    • Send article to Kindle

      To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

      Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

      Find out more about the Kindle Personal Document Service.

      Fabrication of GaN with Buried Tungsten (W) Structures Using Epitaxial Lateral Overgrowth (ELO) via LP-MOVPE
      Available formats
      ×

      Send article to Dropbox

      To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

      Fabrication of GaN with Buried Tungsten (W) Structures Using Epitaxial Lateral Overgrowth (ELO) via LP-MOVPE
      Available formats
      ×

      Send article to Google Drive

      To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

      Fabrication of GaN with Buried Tungsten (W) Structures Using Epitaxial Lateral Overgrowth (ELO) via LP-MOVPE
      Available formats
      ×

Copyright

References

Hide All
1 Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H., Sugimoto, Y., Kozaki, T., Umemoto, H., Sano, M. and Chocho, K., Jpn. J. Appl. Lett. 36 (1997) L1568.
2 Vetury, R., Marchand, H., Parish, G., Fini, P. T., Ibbetson, J. P., Keller, S., Speck, J. S., DenBaars, S. P. and Mishra, U. K., Inst. Phys. Conf. Ser. No. 162: Chapter5 (1999) 177.
3 Ujiie, Y. and Nishinaga, T., Jpn. J. Appl. Phys. 28 (1989) L327.
4 Usui, A., Sunakawa, H., Sakai, A. and Yamaguchi, A., Jpn. J. Appl. Phys. 36 (1997) L899.
5 Sone, H., Nambu, S., Kawaguchi, Y., Yamaguchi, M., Miyake, H., Hiramatsu, K., Iyechika, Y., Maeda, T. and Sawaki, N., Jpn. J. Appl. Phys. 38 (1999) L356.
6 Asai, H., Adachi, S., Ando, S. and Oe, K., J. Appl. Phys. 55 (1984) 3868
7 Kawaguchi, Y., Nambu, S., Sone, H., Yamaguchi, M., Miyake, H., Hiramatsu, K., and Miyake, N. Sawaki, , Jpn. J. Appl. Phys. 37 (1998) L845.
8 , H., Motogaito, A. and Hiramatsu, K., Jpn. J. Appl. Phys. 38 (1999) L1000.
9 Hiramatsu, K., Matsushima, H., Hanai, H. and Sawaki, N. : Mat. Res. Soc. Symp. Proc. 482 (1998) 991.

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed