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Electrical transport of an AlGaN/GaN two-dimensional electron gas

  • A. Saxler (a1), P. Debray (a1), R. Perrin (a1), S. Elhamri (a1), W. C. Mitchel (a1), C.R. Elsass (a2), I.P. Smorchkova (a2), B. Heying (a2), E. Haus (a2), P. Fini (a2), J.P. Ibbetson (a2), S. Keller (a2), P.M. Petroff (a2), S.P. DenBaars (a2), U.K. Mishra (a2) and J.S. Speck (a2)...

Abstract

An AlxGa1−xN/GaN two-dimensional electron gas structure with x = 0.13 deposited by molecular beam epitaxy on a GaN layer grown by organometallic vapor phase epitaxy on a sapphire substrate was characterized. Hall effect measurements gave a sheet electron concentration of 5.1×1012 cm−2 and a mobility of 1.9 × 104 cm2/Vs at 10 K. Mobility spectrum analysis showed single-carrier transport and negligible parallel conduction at low temperatures. The sheet carrier concentrations determined from Shubnikov-de Haas magnetoresistance oscillations were in good agreement with the Hall data. The electron effective mass was determined to be 0.215±0.006 m0 based on the temperature dependence of the amplitude of Shubnikov-de Haas oscillations. The quantum lifetime was about one-fifth of the transport lifetime of 2.3 × 10−12 s.

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References

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Electrical transport of an AlGaN/GaN two-dimensional electron gas

  • A. Saxler (a1), P. Debray (a1), R. Perrin (a1), S. Elhamri (a1), W. C. Mitchel (a1), C.R. Elsass (a2), I.P. Smorchkova (a2), B. Heying (a2), E. Haus (a2), P. Fini (a2), J.P. Ibbetson (a2), S. Keller (a2), P.M. Petroff (a2), S.P. DenBaars (a2), U.K. Mishra (a2) and J.S. Speck (a2)...

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