Skip to main content Accessibility help
×
Home

A damage-reduced process revealed by photoluminescence in photoelectrochemical etching GaN

  • J. M. Hwang (a1), J. T. Hsieh (a1), H. L. Hwang (a1) and W. H. Hung (a2)

Abstract

Photoelectrochemical (PEC) etching technique has been proven to be an effective method to etch GaN. Despite its success, investigations on etching-induced damage are still scare. In this work, the damage induced by PEC etching of GaN in KOH electrolyte was studied. Photoluminescence (PL) spectroscopy was used to explore the origin of etching-induced damaged layer. From the variable temperature PL measurements, the origin of etching-induced damage was attributed to be the defect complex of VGa-ON (gallium vacancy bonds to oxygeon on nitrogen antisite). With determination of the defect origin, the electronic transition in the etch damage-related yellow luminescence (YL) band was suggested to be deep donor-like state to shallow-acceptor transition. In addition, a post-treatment method with boiled KOH chemical etching was developed to remove the thin damaged layer. In this method, crystallographic etching characteristics of boiled KOH was observed to assist in the formation of smooth sidewall facets. As revealed by the reduction of yellow luminescence, we propose this novel technique as a near damage-free etching method.

  • View HTML
    • Send article to Kindle

      To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

      Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

      Find out more about the Kindle Personal Document Service.

      A damage-reduced process revealed by photoluminescence in photoelectrochemical etching GaN
      Available formats
      ×

      Send article to Dropbox

      To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

      A damage-reduced process revealed by photoluminescence in photoelectrochemical etching GaN
      Available formats
      ×

      Send article to Google Drive

      To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

      A damage-reduced process revealed by photoluminescence in photoelectrochemical etching GaN
      Available formats
      ×

Copyright

References

Hide All
1. Vartuli, C. B., Pearton, S. J.,Abernathy, C. R., MacKenzie, J. D., Ren, F., Zolper, J.C., Shul, R. J., Solid-State Electronics vol 41, 1947-1951 (1997)
2. Shul, R. J., Howard, A. J., Pearton, S. J., Abernathy, C. R., Vartuli, C. B., Barnes, P. A. and Bozack, M. J., J. Vac. Sci. Technol. B 13 2016 (1995)
3. Ping, A. T., Schmitz, A. C., and Adesida, I., J. of Electro. Mater. 25 825 (1995)
4. Charles, R. Eddy, Jr., MRS Internet J. Nitride Semicond. Res. 4S1, G10.5 (1999)
5. Chen, J. Y., Pan, C. J., and Chi, G. C., Solid-state Electronics 43 649 (1999)
6. Minskey, M. S., White, M., and Hu, E. L., Appl. Phys. Lett. 68, 1531 (1996)
7. Youtsey, C., Adesida, I., and Bulman, G., Appl. Phys. Lett. 71, 2151 (1997)
8. Youtsey, C., Adesida, I., Romano, L. T., and Bulman, G., Appl. Phys. Lett. 72, 560 (1998)
9. Hsieh, J. T., Hwang, J. M., Hung, W. H. and Hwang, H. L., (unpublished)
10. Kovalev, D., Averboukh, B., Volm, D., and Meyer, B. J., Phys. Rev. B 54, 2518. (1996).
11. Matsumoto, Takashi and Aoki, Masaharu, Japan. J. Appl. Phys. 13 1804 (1974)
12. Glaser, E. R., Kennedy, T. A., Doverspike, K., Rowland, L. B., Gaskill, D. K.., Olson, D. T., Kuznia, J. N., and Wickenden, D. K. Phys. Rev. B 51,13326 (1995)
13. Stocker, D. A., Schubert, E. F. and Redwing, J. M., Appl. Phys. Lett. 73, 2654 (1998)

A damage-reduced process revealed by photoluminescence in photoelectrochemical etching GaN

  • J. M. Hwang (a1), J. T. Hsieh (a1), H. L. Hwang (a1) and W. H. Hung (a2)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed