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Characterization and Modeling of Photoconductive GaN Ultraviolet Detectors

  • E. Monroy (a1), J. A. Garrido (a1), E. Muñoz (a1), I. Izpura (a1), F. J. Sánchez (a1), M. A. Sánchez-García (a1), E. Calleja (a1), B. Beaumont (a2) and Pierre Gibart (a2)...

Abstract

In this work high gain GaN photoconductive UV detectors have been fabricated and characterized, and a novel gain mechanism, dominant in these detectors, is described. DC responsivities higher than 103A/W have been measured for an incident power of lW/m2 at room temperature. The photoconductive gain depends directly on the bias voltage and scales with incident power as P −k (k ≈ 0.9) for more than five decades. A decrease of both gain and k parameter with temperature has also been observed. As a consequence of the slow non-exponential transient response, AC gain measurements result in lower values for gain and k parameter, which are frequency dependent. The high responsivity, non-linear behavior and slow non-exponential transient response, are all modeled taking into account a modulation mechanism of the layer conductive volume. Such spatial modulation is due to the photovoltaic response of the potential barriers related to the surface and charged dislocations arrays.

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Keywords

Characterization and Modeling of Photoconductive GaN Ultraviolet Detectors

  • E. Monroy (a1), J. A. Garrido (a1), E. Muñoz (a1), I. Izpura (a1), F. J. Sánchez (a1), M. A. Sánchez-García (a1), E. Calleja (a1), B. Beaumont (a2) and Pierre Gibart (a2)...

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