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Low-temperature preparation of BaTiO3 thin films by intense, pulsed, ion beam evaporation

  • T. Sonegawa (a1), C. Grigoriu (a1), K. Masugata (a1), K. Yatsui (a1), Y. Shimotori, S. Furuuchi and H. Yamamoto...

Abstract

Cubic barium titanate (BaTiO3) thin films have been prepared in situ, on a low-temperature substrate, Al/SiO2/Si(100), by intense, pulsed ion beam evaporation. We have first proposed a new deposition configuration, backside deposition, which, in comparison with standard frontside deposition, produces very smooth thin films, Rα (mean roughness) ≈ 3 ∼ 9 nm, without any droplets. There is no significant change of the dielectric constant in the frequency range of 10 ∼ 105 Hz. The dielectric constant for the film deposited at the substrate temperature of 200˚C is typically ∼90 at 1 kHz.

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Low-temperature preparation of BaTiO3 thin films by intense, pulsed, ion beam evaporation

  • T. Sonegawa (a1), C. Grigoriu (a1), K. Masugata (a1), K. Yatsui (a1), Y. Shimotori, S. Furuuchi and H. Yamamoto...

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