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Free electron laser high gain devices

  • G. DATTOLI (a1), P.L. OTTAVIANI (a2) and A. RENIERI (a1)

Abstract

High gain free electron laser devices, operating in the self amplified spontaneous emission regime, are under construction and was designed as the next generation of synchrotron radiation sources. In this paper we discuss the relevant physical aspects and derive simple relations for laser and higher order harmonic power, which can usefully be exploited in the preliminary design of these sources

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Corresponding author

Address correspondence and reprint requests to: Giuseppe Dattoli, ENEA, Centro Ricerche di Frascati C.P. 65 00044 FRASCATI, Rome, Italy. E-mail: dattoli@frascati.enea.it

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This paper was presented at the 28th ECLIM conference in Rome, Italy.

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REFERENCES

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Keywords

Free electron laser high gain devices

  • G. DATTOLI (a1), P.L. OTTAVIANI (a2) and A. RENIERI (a1)

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