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X-ray photoelectron spectroscopy studies of silicon suboxides obtained by the sol-gel method

  • S. Santucci (a1), E. Cordeschi (a1), L. Lozzi (a1), M. Passacantando (a1), P. Picozzi (a1) and L. Mancinelli degli Esposti (a2)...

Abstract

Silicon suboxides thin films obtained by sol-gel and dip-coating methods, starting from a sol containing different percentages of TEOS (tetraethoxysilane) and MTEOS (methyltriethoxysilane), were grown onto silicon substrates. The samples were annealed at 100, 300, and 500 °C, and the electronic and compositional properties of the surface were studied by x-ray photoelectron spectroscopy (XPS) detecting the Si “Auger parameter” and the valence band. The effects produced by an ion-sputtering treatment of the samples were also studied.

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X-ray photoelectron spectroscopy studies of silicon suboxides obtained by the sol-gel method

  • S. Santucci (a1), E. Cordeschi (a1), L. Lozzi (a1), M. Passacantando (a1), P. Picozzi (a1) and L. Mancinelli degli Esposti (a2)...

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