Hostname: page-component-8448b6f56d-qsmjn Total loading time: 0 Render date: 2024-04-23T18:03:56.680Z Has data issue: false hasContentIssue false
  • English
  • Français

Transmission electron microscopy study of Ge implanted into SiC

Published online by Cambridge University Press:  31 January 2011

T. Gorelik ,
U. Kaiser ,
Ch. Schubert ,
W. Wesch  and
U. Glatzel
T. Gorelik
Affiliation:
Physikalisch-Astronomische Fakultät, Universität Jena, D-07743 Jena, Germany
U. Kaiser
Affiliation:
Physikalisch-Astronomische Fakultät, Universität Jena, D-07743 Jena, Germany
Ch. Schubert
Affiliation:
Physikalisch-Astronomische Fakultät, Universität Jena, D-07743 Jena, Germany
W. Wesch
Affiliation:
Physikalisch-Astronomische Fakultät, Universität Jena, D-07743 Jena, Germany
U. Glatzel*
Affiliation:
Physikalisch-Astronomische Fakultät, Universität Jena, D-07743 Jena, Germany
*
a) Address all correspondence to this author. e-mail: uwe.glatzel@uni-jena.de
Get access

Abstract

Hexagonal 6H– and 4H–SiC wafers were implanted with (1−1.5) × 1016 cm−2 germanium ions at room temperature and at 700 °C with subsequent annealing between 1000 and 1600 °C. Structural changes in the SiC matrix were studied in detail by means of transmission electron microscopy (TEM). After implantation at room temperature the hexagonal SiC matrix becomes amorphous and, after annealing, recrystallizes into cubic SiC. The latter process was accompanied by the creation of voids and cracks. In case of high-temperature (700 °C) implantation, where amorphization was avoided, no polytype change in as-implanted and annealed SiC wafers was observed. In annealed samples nanocrystalline precipitates with high Ge content were observed in high-resolution TEM images.

Type
Articles
Information
Journal of Materials Research , Volume 17 , Issue 2 , February 2002 , pp. 479 - 486
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Zhao, X., Schoenfeld, O., Nomura, S., Kusano, J., Komuro, S., Aoyagi, Y., and Sugano, T., The Physics of Semiconductors, ICPS 22 Proceedings (World Scientific, Singapore, 1995), p. 2035.Google Scholar
2.Tiwari, S., Rana, F., Hanafi, H., Hartstein, A., Crabbe, E.F., and Chan, K., Appl. Phys. Lett. 68, 1377 (1996).Google Scholar
3.Lide, D.R., Handbook of Chemistry and Physics (CRC Press, Boca Raton, FL, 1997).Google Scholar
4.Wesch, W., Nucl. Instrum. Methods Phys. Res., Sect. B 116, 305 (1996).CrossRefGoogle Scholar
5.Ren, S., Phys. Rev. B 55, 4665 (1997).Google Scholar
6.Ren, S., Solid State Commum. 103, 479 (1997).Google Scholar
7.Ogut, S., Chelikowsky, J.R., and Louie, S.G., Phys. Rev. Lett. 79, 1770 (1997).CrossRefGoogle Scholar
8.Takeoka, S., Fujii, M., Hayashi, S., and Yamamoto, K., Phys. Rev. B 58, 7921 (1998).CrossRefGoogle Scholar
9.Maeda, Y., Tsukamoto, N., Yazawa, Y., Kanemitsu, Y., and Masumoto, Y., Appl. Phys. Lett. 59, 3168 (1991).Google Scholar
10.Eberl, K., Phys. World September (1997).Google Scholar
11. Ch. Schubert, Kaiser, U., Hedler, A., Wesch, W., Gorelik, T., Glatzel, U., Kräußlich, J., Wunderlich, B., Hess, G., and Goetz, K., J. Appl. Phys. (2002, in press).Google Scholar
12.Williams, J.S. and Harrison, H.B., in Laser and Electron Beam Solid Interactions and Materials Processing, edited by Gibbons, J.F., Heff, L.D., and Sigmon, I.W. (North Holland Publishing Company, 1981), p. 209.Google Scholar
13.Radnoczi, G. and Barna, A., Surf. Coat. Technol. 80, 89 (1996).CrossRefGoogle Scholar
14.Heft, A., Wendler, E., Bachmann, T., Glaser, E., and Wesch, W., Mater. Sci. Eng. B 29, 142 (1995).Google Scholar
15.Wesch, W., Heft, A., Wendler, E., Bachmann, T., and Glaser, E., Nucl. Instrum. Methods Phys. Res., Sect. B 96, 335 (1995).CrossRefGoogle Scholar
16.Ishimaru, M., Harada, S., Motooka, T., Nakata, T., Yoneda, T., and Inoue, M., Nucl. Instrum. Methods Phys. Res., Sect. B 127/128, 195 (1997).Google Scholar
17.Harada, S. and Motooka, T., J. Appl. Phys. 87, 2655 (2000).CrossRefGoogle Scholar
18.Weber, W.J., Wang, L.M., and Yu, N., Nucl. Instrum. Methods Phys. Res., Sect. B 116, 322 (1996).Google Scholar
19.Hoefgen, A., Heera, V., Eichhorn, F., and Scorupa, W., J. Appl. Phys. 84, 4769 (1998).Google Scholar
20.Heera, V., Stomenos, J., Koegler, R., and W. Skorupa, J. Appl. Phys. 77, 2999 (1995).Google Scholar
21.Yoo, W.S. and Matsunami, H., Jpn. J. Appl. Phys. 30, 545 (1991).Google Scholar
22.Pacaud, Y., Scorupa, W., and Stoemenos, J., Nucl. Instrum. Methods Phys. Res., Sect. B 120, 181 (1996).Google Scholar
23.Wendler, E., Heft, A., and Wesch, W., Nucl. Instrum. Methods Phys. Res., Sect. B 141, 105 (1998).Google Scholar
24.Usov, I.O., Suvorova, A.A., Sokolov, V.V., Kudryavtsev, Y.A., and Suvorov, A.V., J. Appl. Phys. 86, 6039 (1999).CrossRefGoogle Scholar
25.Musumeci, P., Calcagno, L., Grimaldi, M.G., and Foti, G., Nucl. Instrum. Methods Phys. Res., Sect. B 116, 327 (1996).Google Scholar
26.Ziegler, J.F., Biersack, J.P., and Littmark, U., The Stopping and Ranges of Ions in Solids (Pergamon Press, New York, 1985).Google Scholar
27.Wesch, W., Heft, A., Heindl, J., Strunk, H.P., Bachmann, T., Glaser, E., and Wendler, E., Nucl. Instrum. Methods Phys. Res., Sect. B 106, 339 (1995).Google Scholar
28.Katulka, G., Guedj, C., Kolodzey, J., Wilson, R.W., Swann, C., Tsao, M.W., and Rabolt, J., Appl. Phys. Lett. 74, 540 (1999).Google Scholar
29.Hatayama, T., Tanaka, N., Fuyuki, T., and Matsunami, H., Appl. Phys. Lett. 70, 1411 (1997).CrossRefGoogle Scholar
30.Kaiser, U., J. Electron Microsc. 50, 251 (2001).Google Scholar
31.Guedj, C. and Kolodzey, J., Appl. Phys. Lett. 74, 691 (1999).CrossRefGoogle Scholar
32.Taylor, A. and Doyle, N.J., Scr. Metall. 1, 161 (1967).Google Scholar
33. ASM International’s Binary Alloy Phase Diagrams on CD-ROM (ASM International, Materials Park, OH, 2000).Google Scholar
34.Laube, M., Pensl, G., and Itoh, H., Appl. Phys. Lett. 74, 2292 (1999).Google Scholar
35.Janson, M.S., Linnarsson, M.K., Hallen, A., Svensson, B.G., Nordell, N., and H. Bleichner, Appl. Phys. Lett. 76, 1434 (2000).Google Scholar
36.Williams, D.B. and Carter, C.B., Transmission Electron Microscopy (Plenum Press, New York, 1996).CrossRefGoogle Scholar