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Titanium silicide and titanium nitride formation by titanium-ion implantation for MOS LSI applications

Published online by Cambridge University Press:  31 January 2011

Yasuhisa Omura ,
Hiroshi Inokawa  and
Katsutoshi Izumi
Yasuhisa Omura
Affiliation:
NTT LSI Laboratories, 3–1, Morinosato Wakamiya, Atsugi 243–01, Japan
Hiroshi Inokawa
Affiliation:
NTT LSI Laboratories, 3–1, Morinosato Wakamiya, Atsugi 243–01, Japan
Katsutoshi Izumi
Affiliation:
NTT LSI Laboratories, 3–1, Morinosato Wakamiya, Atsugi 243–01, Japan
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Abstract

A 70-nm-thick, 19-μΩ · cm TiSi2 layer is formed using a Ti-ion implantation technique. TiN/TiSi2 double layers, whose surface morphology is superior to that obtained with conventional deposition and reaction techniques, can also be simultaneously formed by Ti-ion implantation into monocrystalline Si screened with the Si3N4 film. Discrete pn-junction diodes with a shallow TiSi2 layer and Ti-polycide-gate MOS capacitors are fabricated to determine the influences of Ti-ion implantation on electrical characteristics. The leakage current of the B-doped p+n junction and As/P-doped n+p junction with Ti-ion implanted silicide layer is low enough for device applications. Silicide formation on the gate polycrystalline-Si does not affect the breakdown electric field strength of a 20-nm-thick gate oxide. MOS capacitors showed normal C-V characteristics.

Type
Articles
Information
Journal of Materials Research , Volume 6 , Issue 6 , June 1991 , pp. 1238 - 1247
Copyright
Copyright © Materials Research Society 1991

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