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Tilted domain growth of metalorganic chemical vapor (MOCVD)-grown ZnO(0001) on α-Al2O3(0001)

  • C.M. Wang (a1), L.V. Saraf (a1), T.L. Hubler (a2) and P. Nachimuthu (a1)

Abstract

ZnO grown on α-Al2O3(0001) generally possesses an orientation such that α-Al2O3(0001) is parallel to ZnO(0001) and two in-plane domains nucleate, so that α-Al2O3[11¯20] is parallel to ZnO[11¯20] and/or α-Al2O3[11¯20] is parallel to ZnO[10¯10]. In this paper, we report a new growth mode for ZnO grown on α-Al2O3(0001) using metalorganic chemical vapor deposition (MOCVD). We find that α-Al2O3[11¯20] is parallel to ZnO[10¯10], but the (0001) plane of ZnO is tilted relative to the (0001) plane of α-Al2O3 such that ZnO(0001) is almost parallel to the α-Al2O3(¯1104) plane. This orientation reduces the extent of lattice mismatch. The interface between ZnO and α-Al2O3 is abrupt and possesses periodic dislocations.

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Corresponding author

a)Address all correspondence to this author. e-mail: chongmin.wang@pnl.gov

References

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Keywords

Tilted domain growth of metalorganic chemical vapor (MOCVD)-grown ZnO(0001) on α-Al2O3(0001)

  • C.M. Wang (a1), L.V. Saraf (a1), T.L. Hubler (a2) and P. Nachimuthu (a1)

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