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Thin films of BiSrCaCu oxide prepared by laser evaporation

Published online by Cambridge University Press:  31 January 2011

J. Perrière ,
G. Hauchecorne ,
F. Kerhervé ,
F. Rochet ,
R. M. Defourneau ,
C. Simon ,
I. Rosenman ,
J. P. Enard ,
A. Laurent  and
E. Fogarassy
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J. Perrière
Affiliation:
Groupe de Physique des Solides de L'École Normale Supérieure, Université Paris VII, (URA 17) Tour 23, 2, Place Jussieu, 75251 Paris Cedex 05, France
G. Hauchecorne
Affiliation:
Groupe de Physique des Solides de L'École Normale Supérieure, Université Paris VII, (URA 17) Tour 23, 2, Place Jussieu, 75251 Paris Cedex 05, France
F. Kerhervé
Affiliation:
Groupe de Physique des Solides de L'École Normale Supérieure, Université Paris VII, (URA 17) Tour 23, 2, Place Jussieu, 75251 Paris Cedex 05, France
F. Rochet
Affiliation:
Groupe de Physique des Solides de L'École Normale Supérieure, Université Paris VII, (URA 17) Tour 23, 2, Place Jussieu, 75251 Paris Cedex 05, France
R. M. Defourneau
Affiliation:
Groupe de Physique des Solides de L'École Normale Supérieure, Université Paris VII, (URA 17) Tour 23, 2, Place Jussieu, 75251 Paris Cedex 05, France
C. Simon
Affiliation:
Groupe de Physique des Solides de L'École Normale Supérieure, Université Paris VII, (URA 17) Tour 23, 2, Place Jussieu, 75251 Paris Cedex 05, France
I. Rosenman
Affiliation:
Groupe de Physique des Solides de L'École Normale Supérieure, Université Paris VII, (URA 17) Tour 23, 2, Place Jussieu, 75251 Paris Cedex 05, France
J. P. Enard
Affiliation:
Groupe de Physique des Solides de L'École Normale Supérieure, Université Paris VII, (URA 17) Tour 23, 2, Place Jussieu, 75251 Paris Cedex 05, France
A. Laurent
Affiliation:
Groupe de Physique des Solides de L'École Normale Supérieure, Université Paris VII, (URA 17) Tour 23, 2, Place Jussieu, 75251 Paris Cedex 05, France
E. Fogarassy
Affiliation:
Centre de Recherches Nucléaires (IN2P3), Laboratoire PHASE (ER 292), 23, rue du Loess, 67037 Strasbourg Cedex, France
C. Fuchs
Affiliation:
Centre de Recherches Nucléaires (IN2P3), Laboratoire PHASE (ER 292), 23, rue du Loess, 67037 Strasbourg Cedex, France
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Abstract

We have prepared BiSrCaCuO superconducting thin films by the pulsed laser evaporation method, using a YAG or an ArF excimer laser. The as-deposited films, which were enriched in Cu with respect to the bulk target composition Bi2Sr2Ca1Cu2O8 (i.e., the “2212” phase), were converted into the superconducting phase by a subsequent high temperature annealing in oxygen. Resistivity measurements showed superconducting transitions near 90 K, and the highest zero resistivity temperature was 83 K. The influence of the deposition parameters (photon wavelength) and annealing conditions (temperature, duration, and atmosphere) have been studied. The composition and in-depth distribution of the various elements were determined by Rutherford backscattering spectrometry (RBS), and the surface morphology was studied by scanning electron microscopy (SEM).

Type
Articles
Information
Journal of Materials Research , Volume 5 , Issue 2 , February 1990 , pp. 258 - 264
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1Broussard, P. R. and Wolf, S. A., J. Cryst. Growth 91, 340 (1988).CrossRefGoogle Scholar
2Sankur, H. and Cheung, J.T., Appl. Phys. A 47, 271 (1988).CrossRefGoogle Scholar
3Dijkkamp, D., Venkatesan, T., Wu, X. D., Shaheen, S. A., Jiswari, N., Min-Lee, Y. H., McLean, W.L., and Croft, M., Appl. Phys. Lett. 51, 619 (1987).CrossRefGoogle Scholar
4Moorjani, K., Bohandy, J., Adrian, F. J., Kim, B.F., Shull, R.D., Chiang, C. K., Swartzendruber, L. J., and Bennet, L. H., Phys. Rev. B 36, 4036 (1987).CrossRefGoogle Scholar
5Fork, D. K., Boyce, J. B., Ponce, F. A., Johnson, R. I., Anderson, G. B., Connel, G. A. N., Eom, C. B., and Geballe, T. H., Appl. Phys. Lett. 53, 337 (1988).CrossRefGoogle Scholar
6Perrière, J., Fogarassy, E., Hauchecorne, G., Wang, X. Z., Fuchs, C., Rochet, F., Rosenman, I., Simon, C., Defourneau, R. M., Kerhervé, F., Enard, J. P., and Laurent, A., Solid State Commun. 67, 354 (1988).CrossRefGoogle Scholar
7Doolittle, L.R., Nucl. Instrum. Methods. B9, 344 (1985).CrossRefGoogle Scholar
8Fogarassy, E., Fuchs, C., Kerhervè, F., Hauchecorne, G., and Perriére, J., J. Appl. Phys. 66, 457. (1989).CrossRefGoogle Scholar
9Venkatesan, T., Wu, X.D., Inam, A., Jeon, Y., Croft, M., Chase, E.W., Chang, C. C., Wachtman, J. B., Odom, R.W., di Brozolo, F. Radicati, and Magee, C. A., Appl. Phys. Lett. 53, 1431 (1988).CrossRefGoogle Scholar
10Auciello, O., Athavale, S., Hankins, O. E., Sito, M., Shreiner, A. F., and Biunno, N., Appl. Phys. Lett. 53, 72 (1985).CrossRefGoogle Scholar
11Neifeld, R. A., Gunapala, S., Liang, C., Shaheen, S.A., Croft, M., Price, J., Simons, D., and Hill, W.T., III, Appl. Phys. Lett. 53, 703 (1985).CrossRefGoogle Scholar
I2Shah, S. I., Jones, G. A., and Subramanian, M. A., Appl. Phys. Lett. 53, 429 (1985).CrossRefGoogle Scholar
13Sunshine, S. A., Siegriest, T., Schneemeyer, L. F., Murphy, D.W., Cava, R. J., Battlog, B., Van Dover, R. B., Fleming, R. M., Glarum, S. H., Nakahara, S., Farrow, R., Krajewski, J. J., Zahurak, S. M., Waszczak, J.W., Marshall, J. H., Marsh, P., Rupp, L.W., Jr., and Peck, W. F., Phys. Rev. B 38, 893 (1988).CrossRefGoogle Scholar