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Thermally induced damages of PECVD SiNx thin films

  • Yinong Liu (a1), Neerushana Jehanathan (a1) and John Dell (a2)

Abstract

This study investigates thermally induced structural damages to amorphous plasma-enhanced chemical vapor deposition (PECVD) SiNx thin films at elevated temperatures, including chemical structure, microstructure, and physical integrity. The films were synthesized by means of PECVD method. Heating to elevated temperatures in air was found to cause multiple forms of chemical, structural, and physical damages. Chemically the films were found to oxidize and lose their nitrogen and hydrogen contents. Structurally the amorphous SiNx matrix was found to convert partially into SiO2 as a result of oxidation and to crystallize into Si3N4 crystallites. The physical damages include pinholes, circular “penny” cracks, random “dry mud” cracks, and spalling. The types of the damages were observed in different temperature regimes. The formation of the penny cracks is attributed to excessive compressive stresses created in the film by oxidation, which is associated with a large volume expansion. The formation of the random cracks is attributed to tensile stresses caused by crystallization, which is associated with a large volume contraction. Such damages limit the suitable application conditions for devices made of these films.

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Corresponding author

a)Address all correspondence to this author. e-mail: liu@mech.uwa.edu.au

References

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1.Ouacha, A., Willander, M., Hammarlund, B., and Logan, R.A.: Effect of surface passivation with SiN on the electrical properties of InP/InGaAs heterojunction bipolar transistors. J. Appl. Phys. 74, 5602 (1993).
2.Brunet-Bruneau, A., Vuye, G., Frigerio, J.M., Abeles, F., Rivory, J., Berger, M., and Chaton, P.: Infrared ellipsometry investigation of SiOxNy thin films on silicon. Appl. Opt. 35, 4998 (1996).
3.Santana, G., Fandino, J., Ortiz, A., and Alonso, J.C.: Low temperature–low hydrogen content silicon nitrides thin films deposited by PECVD using dichlorosilane and ammonia mixtures. J. Non-Cryst. Solids 351, 922 (2005).
4.Antoszewski, J., Martyniuk, M., Musca, C.A., Dell, J.M., and Faraone, L.: Towards MEMS based infrared tunable micro-spectrometers. SPIE Proc. 1618, 148 (2002).
5.Winchester, K.J. and Dell, J.M.: Tunable Fabry–P’erot cavities fabricated from PECVD silicon nitride employing zinc sulphide as the sacrificial layer. J. Micromech. Microeng. 11, 589 (2001).
6.Soh, M.T.K., Savvides, N., Musca, C.A., Martyniuk, M.P., and Faraone, L.: Local bonding environment of nitrogen-rich silicon nitride thin films. J. Appl. Phys. 97, 093714 (2005).
7.Bae, S., Farber, D.G., and Fonash, S.J.: Characteristics of low-temperature silicon nitride (SiNx:H) using electron cyclotron resonance plasma. Solid State Electron. 44, 1355 (2000).
8.Karcher, R., Ley, L., and Johnson, R.L.: Electronic structure of hydrogenated and unhydrogenated amorphous SiNx: A photoemission study. Phys. Rev. B 30, 1896 (1984).
9.Knolle, W.R. and Osenbach, J.W.: The structure of plasma deposited silicon nitride films determined by infrared spectroscopy. J. Appl. Phys. 58, 1248 (1985).
10.Alvarez, F. and Valladares, A.A.: The atomic and electronic structure of amorphous silicon nitride. Rev. Mex. Fis. 48, 528 (2002).
11.Thurn, J., Cook, R.F., Kamarajugadda, M., Bozeman, S.P., and Stearns, L.C.: Stress hysteresis and mechanical properties of plasma-enhanced chemical vapor deposited dielectric films. J. Appl. Phys. 95, 967 (2004).
12.Jehanathan, N., Liu, Y., Walmsley, B., Dell, J., and Saunders, M.: Effect of oxidation on the chemical bonding structure of PECVD SiNx thin films. J. Appl. Phys. 100, 123516 (2006).
13.Cordill, M.J., Bahr, D.F., Moody, N.R., and Gerberich, W.W.: Adhesion measurements using telephone cord buckles. Mater. Sci. Eng., A 443, 150 (2007).
14.Coupeau, C., George, M., Regache, I., Colin, J., and Grilhe, J.: Buckling pattern with rings: Evidence of plastic damage in thin films. Philos. Mag. Lett. 83, 453 (2003).
15.Hughey, M.P. and Cook, R.F.: Massive stress changes in plasma-enhanced chemical vapor deposited silicon nitride films on thermal cycling. Thin Solid Films 460, 7 (2004).
16.Jehanathan, N., Walmsley, B., Liu, Y., and Dell, J.: Oxidation of PECVD SiNx thin films. J. Alloy. Compd. 437, 332 (2007).
17.Aydinli, A. and Ay, F.: Comparative investigation of hydrogen bonding in silicon based PECVD grown dielectrics for optical waveguides. Opt. Mater. 26, 33 (2004).
18.Kanata, T., Takakura, H., and Hamakawa, Y.: Preparation of composition-controlled silicon oxynitride films by sputtering; deposition mechanism, and optical and surface properties. Appl. Phys. A 49, 305 (1989).
19.Ray, S.K., Das, S., Maiti, C.K., Lahiri, S.K., and Chakraborti, N.B.: Effect of reactive ion bombardment on the properties of silicon nitride and oxynitride films deposited by dual ion beam sputtering. J. Appl. Phys. 75, 8145 (1994).
20.Jehanathan, N., Saunders, M., Liu, Y., and Dell, J.: Crystallization in silicon nitride thin films synthesised by plasma enhanced chemical vapour deposition. Scr. Mater. 57, 739 (2007).
21.Audoly, B.: Stability of straight delamination blisters. Phys. Rev. Lett. 83, 4124 (1999).
22.Walmsley, B.A., Liu, Y., Hu, X.Z., Bush, M.B., Winchester, K.J., Martyniuk, M., Dell, J.M., and Faraone, L.: Effects of deposition temperature on the mechanical and physical properties of PECVD silicon nitride thin films. J. Appl. Phys. 98, 044904 (2005).

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