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Thermal stability of sputtered copper films containing dilute insoluble tungsten: Thermal annealing study

Published online by Cambridge University Press:  31 January 2011

C. H. Lin ,
J. P. Chu ,
T. Mahalingam ,
T. N. Lin  and
S. F. Wang
C. H. Lin
Affiliation:
Institute of Materials Engineering, National Taiwan Ocean University, Keelung 202, Taiwan, Republic of China
J. P. Chu*
Affiliation:
Institute of Materials Engineering, National Taiwan Ocean University, Keelung 202, Taiwan, Republic of China
T. Mahalingam
Affiliation:
Institute of Materials Engineering, National Taiwan Ocean University, Keelung 202, Taiwan, Republic of China
T. N. Lin
Affiliation:
Institute of Materials Engineering, National Taiwan Ocean University, Keelung 202, Taiwan, Republic of China
S. F. Wang
Affiliation:
Department of Materials and Minerals Resources Engineering, National Taipei University of Technology, Taipei 106, Taiwan, Republic of China
*
b)Address all correspondence to this author. e-mail: jpchu@mail.ntou.edu.tw
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Abstract

This paper describes studies on the thermal annealing behavior of Cu films with 2.3 at.% W deposited on Si substrates. The magnetron cosputtered Cu films with insoluble W were vacuum annealed at temperatures ranging from 200 to 800 °C. Twins were observed in focused ion beam and transmission electron microscopy images of as-deposited and 400 °C annealed pure Cu film, and these twins were attributed to the intrinsic low stacking fault energy. Twins in pure Cu film may provide an additional diffusion path during annealing for copper silicide formation. The beneficial effect of W on the thermal stability of Cu film was supported by the following observations: (i) x-ray diffraction studies show that Cu4Si was formed at 530 °C in Cu–W film, whereas pure Cu film exhibited Cu4Si growth at 400 °C; (ii) shallow diffusion profiles for Cu into Si in Cu–W film through secondary ion mass spectroscopy analyses, and the high activation energy needed for the copper silicide formation from the differential scanning calorimetry study; (iii) addition of W in Cu film increases the stacking fault energy and results in a low twin density.

Type
Articles
Information
Journal of Materials Research , Volume 18 , Issue 6 , June 2003 , pp. 1429 - 1434
Copyright
Copyright © Materials Research Society 2003

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