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Thermal Modification of Microstructures and Grain Boundaries in Silicon Carbide

Published online by Cambridge University Press:  31 January 2011

Xiao Feng Zhang  and
Lutgard C. De Jonghe
Xiao Feng Zhang
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, University of California, Berkeley, California 94720
Lutgard C. De Jonghe
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, and Department of Materials Science and Mineral Engineering, University of California, Berkeley, California 94720
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Abstract

Polycrystalline SiC samples hot pressed with aluminum, boron, and carbon sintering additions (ABC-SiC) were characterized using transmission electron microscopy. The study focused on the effects of high-temperature treatment on microstructure. Three temperatures, at which considerable microstructural changes took place, were found to be critical. At a threshold temperature of approximately 1000°C, 1-nm-wide, amorphous intergranular films started to crystallize. At approximately 1300°C, lattice diffusion in SiC grains resulted in nanoprecipits, which could diffuse into grain boundaries and significantly altered composition. Quantitative microanalysis revealed doubled Al content in intergranular films after annealing at 1300°C. Except for crystallization in intergranular films and nano-precipitation in matrix grains, microstructure remained stable until 1600°C, when microstructural changes with volatile features occurred. A brief holding at 1900°C brought marked changes in microstructure, including structural change in intergranular films, dissolved nanoprecipitates, unit cell dilation, and cracking. The results indicate that ABC-SiC is highly promising in structural applications at up to 1500°C.

Type
Articles
Information
Journal of Materials Research , Volume 18 , Issue 12 , December 2003 , pp. 2807 - 2813
Copyright
Copyright © Materials Research Society 2003

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