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Synthesis of thin films of polycrystalline ferroelectric BiNbO4 on Si by pulsed laser ablation

Published online by Cambridge University Press:  31 January 2011

Soma Chattopadhyay
Affiliation:
Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400 005, India
Pushan Ayyub
Affiliation:
Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400 005, India
R. Pinto
Affiliation:
Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400 005, India
M. S. Multani
Affiliation:
Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400 005, India
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Abstract

The stibiotantalite (ABO4) family includes a number of ferroelectrics and antiferroelectrics with excellent potential for applications. We report the deposition of phase-pure, polycrystalline thin films of BiNbO4 on Si(100) substrates using pulsed laser ablation. The deposition conditions were optimized with respect to substrate temperature, laser parameters, and the ambient oxygen pressure. The films were characterized by x-ray diffraction, energy dispersive x-ray analysis, and Raman spectroscopy, while their microstructure was studied by atomic force microscopy and scanning electron microscopy. Dielectric hysteresis studies indicated that films with a thickness below ≈250 nm are ferroelectric, while thicker ones are antiferroelectric.

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Articles
Copyright
Copyright © Materials Research Society 1998

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