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Structural Properties of Yttria-stabilized Zirconia Thin Films Grown by Pulsed Laser Deposition

Published online by Cambridge University Press:  31 January 2011

J. Y. Dai ,
H. C. Ong  and
R. P. H. Chang
J. Y. Dai
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208
H. C. Ong
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208
R. P. H. Chang
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208
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Abstract

Yttria-stabilized zirconia (YSZ) thin films grown by the pulsed laser deposition method on (0001) sapphire substrates have been studied by x-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and scanning electron microscopy (SEM). It was found that the crystal orientation of the YSZ films changes as a function of oxygen pressure during deposition. At low oxygen pressure (50 mTorr), well-defined (111) oriented YSZ films are grown. High oxygen pressure favors the nucleation of (001) oriented YSZ grains. A model to explain the preferred growth direction of (001) YSZ is presented. Utilizing the experimental data, we have developed a two-step process to epitaxially grow high-quality (001) oriented YSZ on (0001) sapphire substrate.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 4 , April 1999 , pp. 1329 - 1336
Copyright
Copyright © Materials Research Society 1999

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