Skip to main content Accessibility help
×
Home

Structural and electrical properties of AlxIn1-xN (0.10≤x≤0.94) films grown on sapphire substrates

  • Qi-Feng Han, Cheng-Hong Duan, Guo-Ping Du and Wang-Zhou Shi (a1)

Abstract

AlxIn1–xN films were grown on (0001) sapphire substrates by reactive radiofrequency (RF) magnetron sputtering in an ambient of Ar and N2. The XRD patterns are shown from AlxIn1–xN films grown on AlN/sapphire substrates using a wide range of magnetron power ratio settings. The wurtzite structure films have high crystal quality with full-width at half-maximum (FWHM) in the range of 0.22°–0.52°. The surface morphologies were observed by scanning electron microscopy (SEM). Raman spectra were measured on the AlxIn1–xN surfaces in a backscattering configuration at room temperature with 532 nm laser excitation and show A1(LO) bimodal behavior. Electrical resistivity and electron mobility were measured by the Hall effect method in the conventional Van der Pauw geometry at room temperature. The lowest electrical resistivity is 1 × 10−3 Ω·cm. This work suggests that reactive magnetron sputtering is a promising method for growing AlxIn1–xN films in over a large composition range.

Copyright

Corresponding author

a)Address all correspondence to this author. e-mail: qfhan@shnu.edu.cn

References

Hide All
1.Hums, C., Bläsing, J., Dadgar, A., Diez, A., Hempel, T., Christen, J., Krost, A., Lorenz, K., Alves, E.Metal organic vapor phase epitaxy and properties of AlInN in the whole compositional range. Appl. Phys. Lett. 90, 022105 (2007)
2.Bounab, S., Charifia, Z., Bouarissaa, N.Electronic and positronic properties of Al1−xInxN with zincblende structure. Physica B 324, 72 (2002)
3.Guo, Q.X., Ding, J., Tanaka, T., Nishio, M., Ogawa, H.X-ray absorption near-edge fine structure study of AlInN semiconductors. Appl. Phys. Lett. 86, 111911 (2005)
4.Yamaguchi, S., Izaki, R., Kaiwa, N., Sugimura, S., Yamamoto, A.Thermoelectric devices using InN and Al1−xInxN thin films prepared by reactive radio-frequency sputtering. Appl. Phys. Lett. 84, 5344 (2004)
5.Pietzka, C., Denisenko, A., Alomari, M., Medjdoub, F., Carlin, J.F., Feltin, E., Grandjean, N., Kohn, E.Effect of anodic oxidation on the characteristics of lattice-matched AlInN/GaN heterostructures. J. Electron. Mater. 37, 616 (2008)
6.Xie, J.Q., Ni, X.F., Wu, M., Leach, J.H., Özgür, Ü., Morkoç, H.High electron mobility in nearly lattice-matched AlInN/AlN/GaN heterostructure field effect transistors. Appl. Phys. Lett. 91, 132116 (2007)
7.Wang, K., Martin, R.W., Amabile, D., Edwards, P.R., Hernandez, S., Nogales, E., O'Donnell, K.P., Lorenz, K., Alves, E., Matias, V., Vantomme, A., Wolverson, D., Watson, I.M.Optical energies of AlInN epilayers. J. Appl. Phys. 103, 073510 (2008)
8.Gonschorek, M., Carlin, J.F., Feltin, E., Py, M.A., Grandjean, N., Darakchieva, V., Monemar, B., Lorenz, M., Ramm, G.Two-dimensional electron gas density in Al1−xInxN/AlN/GaN heterostructures (0.03 < x < 0.23). J. Appl. Phys. 103, 093714 (2008)
9.Seppänen, T., Hultman, L., Birch, J., Beckers, M., Kreissig, U.Deviations from Vegard's rule in Al1−xInxN (0001) alloy thin films grown by magnetron sputter epitaxy. J. Appl. Phys. 101, 043519 (2007)
10.Gadanecz, A., Bläsing, J., Dadgar, A., Hums, C., Krost, A.Thermal stability of metal organic vapor phase epitaxy grown AlInN. Appl. Phys. Lett. 90, 221906 (2007)
11.Dadgar, A., Schulze, F., Bläsing, J., Diez, A., Krost, A., Neuburger, M., Kohn, E., Daumiller, I., Kunze, M.High sheet charge-carrier density AlInN/GaN field effect transistors on Si (111). Appl. Phys. Lett. 85, 5400 (2004)
12.Butte, R., Carlin, J.F., Feltin, E., Gonschorek, M., Nicolay, S., Christmann, G., Simeonov, D., Castiglia, A., Dorsaz, J., Buehlmann, H.J.Current status of AlInN layers lattice-matched to GaN for photonics and electronics. J. Phys. D: Appl. Phys. 40, 6328 (2007)
13.Onuma, T., Chichibu, S.F., Uchinuma, Y., Sota, T., Yamaguchi, S., Kamiyama, S., Amano, H., Akasaki, I.Recombination dynamics of localized excitons in Al1–xInxN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy. J. Appl. Phys. 94, 2449 (2003)
14.Cheng, A.T., Su, Y.K., Lai, W.C., Chen, Y.Z., Kuo, S.Y.Characterization of Mg-doped AlInN annealed in nitrogen and oxygen ambients. J. Electron. Mater. 37, 1070 (2008)
15.Lorenz, K., Franco, N., Alves, E., Watson, I.M., Martin, R.W., O'Donnell, K.P.Anomalous ion channeling in AlInN/GaN bilayers: Determination of the strain states. Phys. Rev. Lett. 97, 085501 (2006)
16.Guo, Q.X., Okazaki, Y., Kume, Y., Tanaka, T., Nishio, M., Ogawa, H.Reactive sputter deposition of AlInN thin films. J. Cryst. Growth 300, 151 (2007)
17.Yeh, T-S., Wu, J-M., Lan, W-H.The effect of AlN buffer layer on properties of AlxIn1−xN films on glass substrates. Thin Solid Films 517, 3204 (2009)
18.Seppänen, T., Persson, P.O.Å., Hultman, L., Birch, J., Radnóczi, G.Z.Magnetron sputter epitaxy of wurtzite Al1−xInxN (0.1 < x < 0.9) by dual reactive DC magnetron sputter deposition. J. Appl. Phys. 97, 083503 (2005)
19.Hemmingsson, C., Boota, M., Rahmatalla, R.O., Junaid, M., Pozina, G., Birch, J., Monemar, B.Growth and characterization of thick GaN layers grown by halide vapor phase epitaxy on lattice-matched AlInN templates. J. Cryst. Growth 311, 292 (2009)
20.Naik, V.M., Weber, W.H., Uy, D., Haddad, D., Naik, R., Danylyuk, Y.V., Lukitsch, M.J., Auner, G.W., Rimai, L.Ultraviolet and visible resonance-enhanced Raman scattering in epitaxial Al1–xInxN thin films. Appl. Phys. Lett. 79, 2019 (2001)
21.Naik, V., Naik, R., Somashekarappa, H., Mahesh, S.S., Somashekar, R.Variation of crystallite size of Al1–xInxN for different values of x and band gap. Bull. Mater. Sci. 29, 29 (2006)
22.Liou, B.T., Yen, S.H., Kuo, Y.K.Vegard's law deviation in band gap and bowing parameter of AlxIn1–xN. Appl. Phys. A 81, 651 (2005)
23.Liu, Q.L., Bandob, Y., Hu, J.Q.Controlled growth of nanostructured III-nitride films via a reactive magnetron sputtering method. J. Cryst. Growth 306, 288 (2007)
24.Kang, T-T., Yamamoto, M., Tanaka, M., Hashimoto, A., Yamamoto, A.Effect of gas flow on the growth of In-rich AlInN films by metal-organic chemical vapor deposition. J. Appl. Phys. 106, 053525 (2009)
25.Kang, T-T., Hashimoto, A., Yamamoto, A.Raman scattering of indium-rich AlxIn1−xN: Unexpected two-mode behavior of A1(LO). Phys. Rev. B: Condens. Matter 79, 033301 (2009)
26.Abernathy, C.R., MacKenzie, J.D., Bharatan, S.R., Jones, K.S., Pearton, S.J.Growth of InxGa1–xN and InxAl1–xN on GaAs metalorganic molecular beam epitaxy. J. Vac. Sci. Technol., A 13, 716 (1995)
27.Yeh, T.S., Wu, J.M., Lan, W.H.Electrical properties and optical band gaps of AlInN films by reactive sputtering. J. Cryst. Growth 310, 5308 (2008)

Keywords

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed