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Strong visible light emission from silicon-oxycarbide nanowire arrays prepared by electron beam lithography and reactive ion etching

  • Vasileios Nikas (a1), Natasha Tabassum (a1), Brian Ford (a1), Lloyd Smith (a2), Alain E. Kaloyeros (a3) and Spyros Gallis (a3)...


The present report presents results from the fabrication, structural, and optical characteristics of sub-100 nm thermal chemical vapor deposition-grown silicon-oxycarbide (SiC x O y ) nanowire (NW) arrays fabricated by e-beam lithography and reactive-ion-etching. The composition of SiC x O y materials follows closely the silicon-oxycarbide stoichiometry [SiC x O2(1−x), (0 < x < 1)] as observed by compositional and structural analysis. The corresponding structural and bonding evolution of SiC x O y are well-correlated with changes in their optical properties, as demonstrated by the linear dependence of their optical gap and refractive index with [Si–C]/[Si–O] bond–area ratio. By virtue of these advantages, properly tailored SiC x O y NWs were fabricated, exhibiting strong room-temperature visible photoluminescence (PL) through engineering of [Si–C]/[Si–O] bonds. The current studies focused on the thermal-oxidation and excitation intensity behavior of SiC x O y NWs revealed their very good stability, as their luminescence characteristics remain unchanged upon annealing in oxygen ambient (250 °C), while the PL intensity dependence on the excitation power-density exhibited a linear increase up to ∼800 W/cm2.


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