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Stoichiometric effects in epitaxial Ba2−xY1−yCu3−zO7−δ thin films on LaAlO3(100)

Published online by Cambridge University Press:  31 January 2011

Douglas J. Carlson ,
Michael P. Siegal ,
Julia M. Phillips ,
T. H. Tiefel  and
J. H. Marshall
Douglas J. Carlson
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
Michael P. Siegal
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974
Julia M. Phillips*
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974
T. H. Tiefel
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974
J. H. Marshall
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974
*
a)Address correspondence to this author.
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Abstract

Stoichiometric deviations of up to ±5% in Ba2YCu3O7−δ, thin films grown by coevaporation on LaAlO3(100) substrates are found to cause (1) a decrease of the critical current density (Jc) of up to an order of magnitude, (2) a depression of the critical temperature (Tc) and a broadening of the superconducting transition width (ΔT), (3) a deterioration of the surface morphology, and (4) a decrease in the crystallinity of the films. The data indicate that composition deviations of greater than ±1% result in degradation of film quality. These findings have significant implications for the degree of composition control required during deposition to produce films with optimized properties.

Type
Articles
Information
Journal of Materials Research , Volume 5 , Issue 12 , December 1990 , pp. 2797 - 2801
Copyright
Copyright © Materials Research Society 1990

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References

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