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Single molecular precursor metal-organic chemical vapor deposition of MgAl2O4 thin films

  • Jiming Zhang (a1), Gregory T. Stauf (a1), Robin Gardiner (a1), Peter Van Buskirk (a1) and John Steinbeck (a1)...

Abstract

MgAl2O4 films have been grown epitaxially on both Si(100) and MgO(100) by a novel single source metal-organic chemical vapor deposition (MOCVD) process. A single molecular source reagent [magnesium dialuminum isopropoxide, MgAl2(OC3H7)8] having the desired Mg: Al ratio was dissolved in a liquid solution and flash-vaporized into the reactor. Both thermal and plasma-enhanced MOCVD were used to grow epitaxial MgAl2O4 thin films. The Mg: Al ratio in the deposited films was the same as that of the starting compound (Mg: Al = 1:2) over a wide range of deposition conditions. The deposition temperature required for the formation of crystalline spinel was found to be significantly reduced and crystallinity was much improved on Si by using a remote plasma-enhanced MOCVD process. The epitaxial nature of the MgAl2O4 films was established by x-ray pole figure analysis.

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1Alper, A. M., McNally, R.N., Ribbe, P. G., and Doman, R. C., J. Am. Ceram. Soc. 45, 264 (1962).
2Tropf, W. J. and Thomas, M. E., Handbook of Optical Constants of Solids (Academic Press, New York, 1991), p. 883.
3Hartnett, T. M. and Gentilman, R. L., Proc. SPIE 505, 15 (1984).
4Woosley, J. D., Wood, C., Sonder, E., and Weeks, R. A., Phys. Rev. B 22, 1065 (1980).
5Wang, C. C., J. Appl. Phys. 40, 3433 (1969).
6Ogata, H., Hanafusa, H., and Yoneda, K., J. Cryst. Growth 95, 500 (1989).
7Maruyama, S., J. Appl. Phys. 24, 363 (1985).
8Matsubara, S., Miura, S., Miyasaka, Y., and Shohata, N., J. Appl. Phys. 66, 5826 (1989).
9Hwang, D. M., Remesh, R., Chen, C. Y., Wu, X. D., Inam, A., Hegde, M. S., Wilkens, B., Chang, C. C., Nazar, L., Venkatesan, T., Matsubara, S., Miura, S., Miyasaka, Y., and Shohata, N., J. Appl. Phys. 68, 1772 (1990).
10Zhang, J., Gardiner, R. A., Kirlin, P. S., Boerstler, R. W., and Steinbeck, J., Appl. Phys. Lett. 61, 2884 (1992).
11Van Buskirk, P., Gardiner, R. A., and Kirlin, P. S., J. Vac. Sci. Technol. A 10, 1578 (1992).
12See, for example, Nguyen, V. S., in Handbook of Thin-Film Deposition Processes and Techniques, edited by Schuegral, K. K. (Noyes Publications, Park Ridge, NJ, 1988).
13Lucovsky, G. and Tsu, D. V., J. Vac. Sci. Technol. A 4, 681 (1986).

Single molecular precursor metal-organic chemical vapor deposition of MgAl2O4 thin films

  • Jiming Zhang (a1), Gregory T. Stauf (a1), Robin Gardiner (a1), Peter Van Buskirk (a1) and John Steinbeck (a1)...

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