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Simultaneous real-time study of initial hillocking and changes in overall stress in evaporated Al films during heating

Published online by Cambridge University Press:  31 January 2011

C. Kylner  and
L. Mattsson
C. Kylner
Affiliation:
Department of Physics II – Optics, Royal Institute of Technology, S-100 44 Stockholm, Sweden, and Surface Evaluation Laboratory, Institute of Optical Research, S-100 44 Stockholm, Sweden
L. Mattsson
Affiliation:
Surface Evaluation Laboratory, Institute of Optical Research, S-100 44 Stockholm, Sweden
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Abstract

Optical quality Al films were evaporated by an electron beam onto Si wafers in an ultrahigh vacuum system. The as-deposited samples were radiative heated at a rate of 3 °C/s in air environment. During heating, measurements of initial hillocking and changes in overall film stress were performed simultaneously and in real time as a function of time and temperature with a specially designed optical instrument. The physical principles of this instrument are based on laser beam deflection caused by film stress induced wafer bending and partial integrated light scattering from surface roughening. The experimental results show how the initial hillocking is accompanied by changes in the overall stress and yield a very good correlation between the onset of hillock formation and the maximum change in overall stress.

Type
Articles
Information
Journal of Materials Research , Volume 13 , Issue 6 , June 1998 , pp. 1666 - 1671
Copyright
Copyright © Materials Research Society 1998

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