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Sequential multiplication of dislocation sources along a crack front revealed by high-voltage electron microscopy and tomography

Published online by Cambridge University Press:  11 March 2011

Masaki Tanaka*
Affiliation:
Department of Materials Science and Engineering, Kyushu University, Nishi-ku, Fukuoka 819-0395, Japan
Sunao Sadamatsu
Affiliation:
Department of Materials Science and Engineering, Kyushu University, Nishi-ku, Fukuoka 819-0395, Japan
Grace S. Liu
Affiliation:
Department of Materials Science and Engineering, University of Illinois, Urbana, Illinois 61801
Hiroto Nakamura
Affiliation:
Department of Materials Science and Engineering, Kyushu University, Nishi-ku, Fukuoka 819-0395, Japan
Kenji Higashida
Affiliation:
Department of Materials Science and Engineering, Kyushu University, Nishi-ku, Fukuoka 819-0395, Japan
Ian M. Robertson
Affiliation:
Department of Materials Science and Engineering, University of Illinois, Urbana, Illinois 61801
*
a)Address all correspondence to this author. e-mail: tanaka.masaki.760@m.kyushu-u.ac.jp
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Abstract

The three-dimensional structure of crack tip dislocations in single crystal silicon was observed by combining high-voltage electron microscopy and tomography. It was revealed that dislocations cross-slipped proximal to the crack tip even in the initial stages of plastic deformation. The local stress intensity factor along the crack front was calculated by taking into account the experimentally determined dislocation character. Based on these observations and calculations, a model to account for the sequential multiplication of dislocation sources along the crack front is proposed.

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Articles
Copyright
Copyright © Materials Research Society 2011

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Footnotes

b)

This author was an editor of this journal during the review and decision stages. For the JMR policy on review and publication of manuscripts authored by editors, please refer to http://www.mrs.org/jmr_policy

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