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Selective growth and kinetic study of copper oxide nanowires from patterned thin-film multilayer structures

Published online by Cambridge University Press:  31 January 2011

Nitin Chopra ,
Bing Hu  and
Bruce J. Hinds
Nitin Chopra
Affiliation:
Chemical and Materials Engineering Department, University of Kentucky, Lexington, Kentucky 40506
Bing Hu
Affiliation:
Chemical and Materials Engineering Department, University of Kentucky, Lexington, Kentucky 40506
Bruce J. Hinds*
Affiliation:
Chemical and Materials Engineering Department, University of Kentucky, Lexington, Kentucky 40506
*
a)Address all correspondence to this author. e-mail: bjhinds@engr.uky.edu
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Abstract

Selective growth of CuO nanowires on the etched face of Al2O3/Cu/Al2O3 thin-film multilayer patterns was achieved by ambient oxidation at 400 °C. The nanowires were observed to selectively grow only from the pattern edge with diameter limited by the thickness of Cu thin film. Transmission-electron-microscopy (TEM) characterization confirmed CuO nanowires of a monoclinic CuO growing in the [010] crystallographic direction. Nanowire growth kinetics was studied at 400 °C for different cumulative growth durations with initial growth rates of ∼1 nm/min. A base growth mechanism with kinetics limited by oxygen diffusion through defects of a scaling oxide film is consistent with observed kinetics. The oxygen diffusivity is found to be ∼10−11 cm2/s, consistent with the grain-boundary diffusion of oxygen through polycrystalline copper oxide.

Keywords

Crystal growthNanostructureOxide
Type
Articles
Information
Journal of Materials Research , Volume 22 , Issue 10 , October 2007 , pp. 2691 - 2699
Copyright
Copyright © Materials Research Society 2007

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