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Selective epitaxial growth of silicon

Published online by Cambridge University Press:  31 January 2011

J.W. Osenbach ,
D.G. Schimmel ,
A. Feygenson ,
J.J. Bastek ,
J.C.C. Tsai ,
H.C. Praefcke  and
E.W. Bonato
J.W. Osenbach
Affiliation:
AT&T Bell Laboratories, 555 Union Boulevard, Allentown, Pennsylvania 18103
D.G. Schimmel
Affiliation:
Retired
A. Feygenson
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974–2070
J.J. Bastek
Affiliation:
AT&T Bell Laboratories, 2525 North 12th Street, Reading, Pennsylvania 19612–3566
J.C.C. Tsai
Affiliation:
AT&T Bell Laboratories, 2525 North 12th Street, Reading, Pennsylvania 19612–3566
H.C. Praefcke
Affiliation:
AT&T Bell Laboratories, 2525 North 12th Street, Reading, Pennsylvania 19612–3566
E.W. Bonato
Affiliation:
AT&T Bell Laboratories, 555 Union Boulevard, Allentown, Pennsylvania 18103
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Abstract

We have studied selective epitaxial growth of silicon in the SiCl2H2/HCl/H2 system. Our results on growth rate and selectivity are reported here. We found that the growth rate and selectivity are strong functions of the partial pressures of HCl, SiCl2H2, H2, exposed Si area, and wafer position. We propose that growth and selectivity are controlled by surface reactions between SiCl2H2 and HCl and the SiO2 and Si surfaces. Higher HCl flow rates decrease the adsorption coefficients and/or incorporation rates of the reactive SiCl2H2(g) species on both SiO2 and Si. When either is zero for SiO2 and both are greater than zero on Si, selective depositions occur. Finally, we present data on the effect various SiO2 surface treatments have on the density and distribution of Si nuclei on this surface.

Type
Articles
Information
Journal of Materials Research , Volume 6 , Issue 11 , November 1991 , pp. 2318 - 2323
Copyright
Copyright © Materials Research Society 1991

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References

1.Manoliu, J. and Borland, J., IEEE IEDM Tech. Digest, 20C (1987).Google Scholar
2.Ishitani, A., Kitajima, H., Tanno, K., and Tsuya, H., Microelectronic Eng. 4 (3) (1986).Google Scholar
3.Stivers, A., Ting, C., and Borland, J., in Chemical Vapor Deposition, 1987, ECS 87–88, 389 (1987).Google Scholar
4.Bungarti, J., Grinburg, B. S., Mader, S. R., Chen, T. C., and Harame, D. L., IEEE Electron Device Lett. 9, 25a (1988).Google Scholar
5.Drowley, C. I., Reid, G. A., and Hull, R., Appl. Phys. Lett. 52, 546 (1988).Google Scholar
6.Silvestri, V. J., J. Electrochem. Soc. 135, 1806 (1988).Google Scholar
7.Borland, J., Gangahi, M., Wise, R., Fong, S., Oka, Y., and Matsumoto, Y., Solid State Technol. 31 (1), 111 (January 1988).Google Scholar
8.Sugii, T., Yamazski, T., Fukano, T., and Ito, T., Proc. Symp. on 1987 VLSI Technology, Karuizawa, Jpn., Section V-3, p. 35 (May 1987).Google Scholar
9.Borland, J. and Drowley, C., Solid State Technol. 28 (8), 141 (August 1985).Google Scholar
10. See, for example, Kearney, K. M., Semiconductor International 80, 79 (January 1989).Google Scholar
11. Particle Measuring System Inc., Model PLILP-S particle counter, made by Particle Measuring System, Inc., Boulder, CO.Google Scholar
12.Oehrlein, G. S., Scilla, G. J., and Jeng, S. J., Appl. Phys. Lett. 52 (11), 907 (1988).Google Scholar