Hostname: page-component-848d4c4894-mwx4w Total loading time: 0 Render date: 2024-06-19T10:55:19.754Z Has data issue: false hasContentIssue false
  • English
  • Français

Segregation of aluminum in Si and SiO2 films deposited by plasma-enhanced chemical vapor deposition in fabrication of low-temperature poly Si thin-film transitor

Published online by Cambridge University Press:  06 January 2012

U. C. Oh ,
Kwang Nam Kim ,
Sung Chul Kim ,
Hye Dong Kim  and
Ho Kyoon Chung
U. C. Oh
Affiliation:
1st Development Team, Corporate R–5, Gongse-Ri, Kiheung-Eup, Yongin-City, Gyeonggi-Do 449–902, South Korea
Kwang Nam Kim
Affiliation:
1st Development Team, Corporate R–5, Gongse-Ri, Kiheung-Eup, Yongin-City, Gyeonggi-Do 449–902, South Korea
Sung Chul Kim
Affiliation:
1st Development Team, Corporate R–5, Gongse-Ri, Kiheung-Eup, Yongin-City, Gyeonggi-Do 449–902, South Korea
Hye Dong Kim
Affiliation:
1st Development Team, Corporate R–5, Gongse-Ri, Kiheung-Eup, Yongin-City, Gyeonggi-Do 449–902, South Korea
Ho Kyoon Chung
Affiliation:
1st Development Team, Corporate R–5, Gongse-Ri, Kiheung-Eup, Yongin-City, Gyeonggi-Do 449–902, South Korea
Get access

Abstract

Metal contamination in Si and SiO2 films deposited by plasma-enhanced chemical vapor deposition (PECVD) in the fabrication of low-temperature poly Si thin-film transitor was investigated. Aluminum was the major metal impurity to have the highest concentration. Segregation of Al was always observed in the films deposited at temperatures above 400 °C. The impurity level in the segregated region was 1018 ∼ 1020 atoms/cm3 for Al, while the concentration in matrix was about 1016 atoms/cm3. From the transmission electron microscopy image, the Al segregated region contains small-size Al precipitates. Although the Al impurity level of 1016 atoms/cm3 did not cause any serious degradation of device performance, the level of 1018 atom/cm3 and higher can induce a fatal degradation of the threshold voltage. This study revealed that the Al originated from the PECVD chamber, carbon precipitates provided the preferred sites for Al precipitates, and the solubility and diffusivity of Al in Si accelerated the segregation of Al.

Type
Articles
Information
Journal of Materials Research , Volume 18 , Issue 4 , April 2003 , pp. 973 - 978
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Chang, C.Y. and Chao, T.S., in ULSI Technology, edited by Chang, C.Y. and Sze, S.M. (The McGraw-Hill Companies, Inc., Singapore, 1996), pp. 60–104.Google Scholar
Honda, K., Nakanishi, T., Ohsawa, A., and Toyokura, N., J. Appl. Phys. 62, 1960 (1987).CrossRefGoogle Scholar
McHugo, S.A., Thompson, A.C., Perichaud, I., and Martinuzzi, S., Appl. Phys. Lett. 72, 3482 (1988).CrossRefGoogle Scholar
McHugo, S.A., Thompson, C.A., Flink, C., Weber, E.R., Lamble, G., Gunion, B., MacDowell, A., Celestre, R., Padmore, H.A., and Hussain, Z., J. Cryst. Growth 210, 395 (2000).CrossRefGoogle Scholar
Choi, B.D. and Schroder, D.K., Appl. Phys. Lett. 79, 2645 (2001).CrossRefGoogle Scholar
Ohmi, T., Imaoka, T., Kezuka, I., Takano, J., and Kogure, M., J. Electrochem. Soc. 140, 811 (1993).CrossRefGoogle Scholar
Lau, S.S., Wegm, W.F. Van Der, in Solid Phase Epitaxy in Thin Films Interdiffusion and Reactions, edited by Poate, J.M., Tu, K.N., and Mayer, J.W. (Wiley, New York, 1978).Google Scholar
Nakamura, K. and Kamoshida, M., J. Appl. Phys. 48, 5349 (1977).CrossRefGoogle Scholar
Sze, S.M., Semiconductor Devices, (John Wiley & Sons, New York, 1985), pp. 208–213.Google Scholar