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Role of ozone in reactive coevaporation of lead zirconate titanate thin films

Published online by Cambridge University Press:  31 January 2011

Kazuyoshi Torii
Affiliation:
Central Research Laboratory, Hitachi Ltd., 1–280 Higashi koigakubo, Kokubunji, Tokyo 185, Japan
Fumiko Yano
Affiliation:
Central Research Laboratory, Hitachi Ltd., 1–280 Higashi koigakubo, Kokubunji, Tokyo 185, Japan
Yoshihisa Fujisaki
Affiliation:
Central Research Laboratory, Hitachi Ltd., 1–280 Higashi koigakubo, Kokubunji, Tokyo 185, Japan
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Abstract

The role of ozone in the reactive coevaporation of the lead zirconate titanate thin film was investigated by depositing films at various growth rates with various ozone fluxes or molecular oxygen fluxes on unheated substrates and then crystallizing them using rapid thermal annealing. The oxidation state of lead in the as-deposited film was determined from the ratio of the ozone to the total metal fluxes. The amount of atomic oxygen supplied to the surface of the film was at least 103 times larger when the deposition was done using ozone rather than molecular oxygen. When the ozone flux was more than one-third of the total metal flux, well-oxidized films were obtained. To ensure obtaining well-oxidized film, the ozone flax should be more than twice as much.

Type
Articles
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1.Shareef, H. N. Al, Tuttle, B. A., Warren, W. L., Headley, T. J., Dimos, D., Voigt, J. A., and Nasby, R. D., J. Appl. Phys. 79, 1013 (1996).CrossRefGoogle Scholar
2.Warren, W. L., Dimos, D., Pike, G. E., Tuttle, B. A., Raymond, M. V., Ramesh, R., and Evans, J. T., Jr., Appl. Phys. Lett. 67, 866 (1995).CrossRefGoogle Scholar
3.Chen, X., Kingon, A. I., Bellur, K., and Auciello, O., Integ. Ferro. 5, 59 (1994).CrossRefGoogle Scholar
4.Torii, K., Kawakami, H., Kushida, K., Yano, F., and Ohji, Y., Symp. VLSI Tech Digest Tech Papers 1995, p. 125.Google Scholar
5.Torii, K., Saitoh, S., and Ohji, Y., Jpn. J. Appl. Phys. 33, 5287 (1994).CrossRefGoogle Scholar
6.Hosokawa, S. and Ichimura, S., Rev. Sci. Instrum. 62, 1614 (1991).CrossRefGoogle Scholar
7.Zingg, D. S. and Hercules, D. M., J. Phys. Chem. 82, 1992 (1978).CrossRefGoogle Scholar
8.Fujisaki, Y., Torii, K., Hiratani, M., and Kushida, K., Appl. Surf. Sci. 108, 365 (1997).CrossRefGoogle Scholar
9.Kim, K. S. and Winograd, N., Chem. Phys. Lett. 19, 209 (1973).CrossRefGoogle Scholar
10.Sawa, A., Kosaka, S., Oara, H., and Aoki, K., IEEE Trans. Appl. Supercond. 3, 1088 (1993).CrossRefGoogle Scholar
11.Chen, S-Y. and Chen, I-W., J. Am. Ceram. Soc. 77, 2332 (1994).CrossRefGoogle Scholar